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參數(shù)資料
| 型號(hào)： | M12L2561616A-6BG |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 4M x 16 Bit x 4 Banks Synchronous DRAM |
| 中文描述： | 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 |
| 封裝： | 8 X 13 MM, LEAD FREE, BGA-54 |
| 文件頁數(shù)： | 3/44頁 |
| 文件大?。?/td> | 908K |
| 代理商： | M12L2561616A-6BG |
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ES MT
M12L2561616A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.2
Publication Date
:
Aug. 2007
3/44
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to V
SS
V
IN
, V
OUT
-1.0 ~ 4.6
V
Voltage on V
DD
supply relative to V
SS
V
DD
, V
DDQ
-1.0 ~ 4.6
V
Storage temperature
TSTG
-55 ~ +150
C
°
Power dissipation
PD
1
W
Short circuit current
I
OS
50
mA
Note :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITION
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= 0 to 70 C
)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
V
DD
, V
DDQ
3.0
3.3
3.6
V
Input logic high voltage
V
IH
2.0
3.0
V
DD
+0.3
V
1
Input logic low voltage
V
IL
-0.3
0
0.8
V
2
Output logic high voltage
V
OH
2.4
-
-
V
I
OH
= -2mA
Output logic low voltage
V
OL
-
-
0.4
V
μ
A
I
OL
= 2mA
Input leakage current
I
IL
-5
-
5
3
Output leakage current
I
OL
-5
-
5
μ
A
4
Note:
1. V
IH
(max) = 4.6V AC for pulse width
≤
10ns acceptable.
2. V
IL(min)
= -1.5V AC for pulse width
≤
10ns acceptable.
3. Any input 0V
≤
V
IN
≤
V
DD
+ 0.3V, all other pins are not under test = 0V.
4. Dout is disabled , 0V
≤
VOUT
≤
V
DD.
CAPACITANCE
(V
DD
= 3.3V, T
A
= 25
C
°
, f = 1MHZ)
Parameter
Symbol
Min
Max
Unit
Input capacitance (A0 ~ A12, BA0 ~ BA1)
C
IN1
1.5
3
pF
Input capacitance (CLK)
C
CLK
2
3
pF
Input capacitance
(CKE, CS , RAS , CAS ,
WE
& L(U)DQM)
C
IN2
1.5
4.5
pF
Data input/output capacitance (DQ0 ~ DQ15)
C
OUT
2
4.5
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M12L2561616A-6TG | 4M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L2561616A-7BG | 4M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L2561616A-7TG | 4M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L32162A | 1M x 16Bit x 2Banks Synchronous DRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M12L2561616A-6BG2K | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:JEDEC standard 3.3V power supply |
| M12L2561616A-6BIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L2561616A-6TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L2561616A-6TG2K | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:JEDEC standard 3.3V power supply |
| M12L2561616A-6TIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4M x 16 Bit x 4 Banks Synchronous DRAM |
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