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參數(shù)資料
| 型號(hào)： | M12L2561616A-6BG |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 4M x 16 Bit x 4 Banks Synchronous DRAM |
| 中文描述： | 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 |
| 封裝： | 8 X 13 MM, LEAD FREE, BGA-54 |
| 文件頁數(shù)： | 4/44頁 |
| 文件大小： | 908K |
| 代理商： | M12L2561616A-6BG |
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ES MT
M12L2561616A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.2
Publication Date
:
Aug. 2007
4/44
DC CHARACTERISTICS
Recommended operating condition unless otherwise noted
，
T
A
= 0 to 70 C
Version
Parameter
Symbol
Test Condition
CAS
Latency
-6
-7
Unit
Note
Operating Current
(One Bank Active)
I
CC1
Burst Length = 2, t
RC
= t
RC(min)
, I
OL
= 0 mA
170
150
mA
1,2
I
CC2P
CKE = V
IL
(max), tcc = 10ns
4
Precharge Standby Current
in power-down mode
I
CC2PS
CKE & CLK=V
IL
(max), t
CC
=
∞
4
mA
I
CC2N
CKE=V
IH(min)
, CS = V
IH(min)
, t
CC
= 10ns
Input signals are changed one time during 2t
ck
50
Precharge Standby Current
in non power-down mode
I
CC2NS
CKE=V
IH(min)
, CLK=V
IL
(max), tcc =
∞
input signals are stable
30
mA
I
CC3P
CKE=V
IL
(max), t
CC
=10ns
20
Active Standby Current
in power-down mode
I
CC3PS
CKE & CLK=V
IL
(max), t
CC
=
∞
20
mA
I
CC3N
CKE=V
IH
(min), CS =V
IH(min)
, t
CC
= 10ns
Input signals are changed one time during 2t
CK
55
mA
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3NS
CKE=V
IH(min)
, CLK=V
IL
(max), t
CC
=
∞
input signals are stable
45
mA
Operating Current
(Burst Mode)
I
CC4
I
OL
= 0 mA, Page Burst, 4 Banks activated,
t
CCD
= 2 CLKs
210
180
mA
1,2
Refresh Current
I
CC5
t
RFC
≥
t
RFC(min)
210
180
mA
Self Refresh Current
I
CC6
CKE=0.2V
5
mA
Note : 1. Measured with outputs open.
2. Input signals are changed one time during 2 CLKS.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M12L2561616A-6TG | 4M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L2561616A-7BG | 4M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L2561616A-7TG | 4M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L32162A | 1M x 16Bit x 2Banks Synchronous DRAM |
| M12L32162A-7BG | 1M x 16Bit x 2Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M12L2561616A-6BG2K | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:JEDEC standard 3.3V power supply |
| M12L2561616A-6BIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L2561616A-6TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L2561616A-6TG2K | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:JEDEC standard 3.3V power supply |
| M12L2561616A-6TIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4M x 16 Bit x 4 Banks Synchronous DRAM |
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