參數(shù)資料
型號(hào): M12L16161A-7TG
廠商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類: DRAM
英文描述: 512K x 16Bit x 2Banks Synchronous DRAM
中文描述: 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
封裝: 0.400 X 0.825 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50
文件頁(yè)數(shù): 8/30頁(yè)
文件大?。?/td> 714K
代理商: M12L16161A-7TG
ES MT
M12L16161A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May. 2005
Revision
:
2.4
8/30
FREQUENCY vs. AC PARAMENTER RELATIONSHIP TABLE
M12L16161A-5T(G)
(Unit: number of clock)
t
CCD
t
CDL
5ns
5ns
1
1
1
1
1
1
1
1
1
1
t
RC
55ns
11
10
8
7
7
t
RAS
40ns
8
7
6
5
5
t
RP
15ns
3
3
3
2
2
t
RRD
10ns
2
2
2
2
2
t
RCD
15ns
3
3
3
2
2
t
RDL
10ns
2
2
2
2
2
Frequency
CAS
Latency
3
3
2
2
2
200MHz(5.0ns)
166MHz(6.0ns)
143MHz(7.0ns)
125MHz(8.0ns)
111MHz(9.0ns)
M12L16161A-7T(G)
(Unit: number of clock)
t
CCD
t
CDL
7ns
7ns
1
1
1
1
1
1
1
1
1
1
t
RC
63ns
9
8
7
7
6
t
RAS
42ns
6
6
5
5
4
t
RP
20ns
3
3
3
2
2
t
RRD
14ns
2
2
2
2
2
t
RCD
20ns
3
3
3
2
2
t
RDL
14ns
2
2
2
2
2
Frequency
CAS
Latency
3
3
2
2
2
143MHz(7.0ns)
125MHz(8.0ns)
111MHz(9.0ns)
100MHz(10.0ns)
83MHz(12.0ns)
Note : 1. t
RDL
16.7ns is recommended for M12L16161A.
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