參數(shù)資料
型號: M12L16161A-7TG
廠商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類: DRAM
英文描述: 512K x 16Bit x 2Banks Synchronous DRAM
中文描述: 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
封裝: 0.400 X 0.825 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50
文件頁數(shù): 24/30頁
文件大?。?/td> 714K
代理商: M12L16161A-7TG
ES MT
Burst Read Single bit Write Cycle @Burst Length=2
M12L16161A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May. 2005
Revision
:
2.4
24/30
*Note:1.BRSW modes is enabled by setting A9 “High” at MRS(Mode Register Set).
At the BRSW Mode, the burst length at write is fixed to “1” regardless of programmed burst length.
2.When BRSW write command with auto precharge is executed, keep it in mind that t
RAS
should not be violated.
Auto precharge is executed at the next cycle of burst-end, so in the case of BRSW write command, the precharge
command will be issued after two clock cycles.
C L O C K
C K E
A D D R
CL=2
DQ M
A10/AP
BA
RAa
RAc
RAa
QAb0
Row Active
(A-Bank)
W rite
(A-Bank)
:Don't Car e
HIGH
QAb1
Precharge
(A-Bank)
CAa
RBb
CAb
CBc
CAd
RAc
DBc0
DQ
DAa0
QAb0
DBc0
QAb1
CL=3
Row Active
(B-Bank)
Row Active
(A-Bank)
W rite with
Auto Precharge
(B- Bank)
Read
(A-Bank)
DAa0
QAd0 QAd1
QAd0 QAd1
*Not e 1
CS
RAS
CAS
W E
RBb
* Not e 2
Read with
Auto Precharge
(A-Bank)
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