參數(shù)資料
型號(hào)： M12L16161A-7TG
廠商： ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類： DRAM
英文描述： 512K x 16Bit x 2Banks Synchronous DRAM
中文描述： 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
封裝： 0.400 X 0.825 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50
文件頁數(shù)： 4/30頁
文件大?。?/td> 714K
代理商： M12L16161A-7TG
ES MT
DQ0 ~ 15
VDD/VSS
M12L16161A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May. 2005
Revision
:
2.4
4/30
Data Input / Output
Power Supply/Ground
Data inputs/outputs are multiplexed on the same pins.
Power and ground for the input buffers and the core logic.
Isolated power supply and ground for the output buffers to provide improved
noise immunity.
VDDQ/VSSQ
Data Output Power/Ground
N.C/RFU
No Connection/
Reserved for Future Use
This pin is recommended to be left No Connection on the device.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
V
IN
,V
OUT
V
DD
,V
DDQ
T
STG
P
D
I
OS
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ + 150
0.7
50
Unit
V
V
C
°
W
MA
Voltage on any pin relative to V
SS
Voltage on V
DD
supply relative to V
SS
Storage temperature
Power dissipation
Short circuit current
Note:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
=0 to 70
C
°
)
Parameter
Symbol
V
DD
,V
DDQ
V
IH
V
IL
V
OH
V
OL
I
IL
I
OL
Min
3.0
2.0
-0.3
2.4
-
-5
-5
Typ
3.3
3.0
0
-
-
-
-
Max
3.6
V
DD
+0.3
0.8
-
0.4
5
5
Unit
V
V
V
V
V
uA
uA
Note
1
2
I
OH
=-2mA
I
OL
= 2mA
3
4
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Output leakage current
Note :
1.V
IH
(max) = 4.6V AC for pulse width
≤
10ns acceptable.
2.V
IL
(min) = -1.5V AC for pulse width
≤
10ns acceptable.
3.Any input 0V
≤
V
IN
≤
V
DD
+ 0.3V, all other pins are not under test = 0V.
4.Dout is disabled, 0V
≤
V
OUT
≤
VDD.
CAPACITANCE
(V
DD
= 3.3V, T
A
= 25
C
°
, f = 1MHz)
Pin
Symbol
C
CLK
Min
2.5
Max
4.0
Unit
pF
CLOCK
RAS , CAS ,
WE
, CS , CKE, LDQM,
UDQM
ADDRESS
DQ0 ~DQ15
C
IN
2.5
5.0
pF
C
ADD
C
OUT
2.5
4.0
5.0
6.5
pF
pF
相關(guān)PDF資料
PDF描述
M12L2561616A 4M x 16 Bit x 4 Banks Synchronous DRAM
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M12L2561616A-6TG 4M x 16 Bit x 4 Banks Synchronous DRAM
M12L2561616A-7BG 4M x 16 Bit x 4 Banks Synchronous DRAM
M12L2561616A-7TG 4M x 16 Bit x 4 Banks Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M12L16161A-7TG2Q 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks
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M12L16161A-8T 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM
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M12L16161C6TAASQ 制造商:MOTOROLA 功能描述:NEW
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