參數(shù)資料
型號(hào): M12L128324A
廠商: Elite Semiconductor Memory Technology Inc.
英文描述: 1M x 32 Bit x 4 Banks Synchronous DRAM
中文描述: 100萬× 32位× 4個(gè)銀行同步DRAM
文件頁數(shù): 4/47頁
文件大?。?/td> 794K
代理商: M12L128324A
ES MT
M12L128324A
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2006
Revision
:
1.2
4/47
DQM0~3
DQ
Mode
Register
C
Column
Address
Buffer
&
Refresh
Counter
Row
Address
Buffer
&
Refresh
Counter
Bank D
Bank C
R
Bank A
Bank B
Sense Amplifier
Column Decoder
Data Control Circuit
L
I
B
Address
Clock
Generator
CLK
CKE
C
CS
RAS
CAS
WE
BLOCK DIAGRAM
PIN DESCRIPTION
PIN
NAME
INPUT FUNCTION
CLK
System Clock
Active on the positive going edge to sample all inputs
CS
Chip Select
Disables or enables device operation by masking or enabling all
inputs except CLK , CKE and DQM0-3.
CKE
Clock Enable
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior new command.
Disable input buffers for power down in standby.
A0 ~ A11
Address
Row / column address are multiplexed on the same pins.
Row address : RA0~RA11, column address : CA0~CA7
BA0 , BA1
Bank Select Address
Selects bank to be activated during row address latch time.
Selects bank for read / write during column address latch time.
RAS
Row Address Strobe
Latches row addresses on the positive going edge of the CLK with
RAS low.
Enables row access & precharge.
CAS
Column Address Strobe
Latches column address on the positive going edge of the CLK with
CAS low.
Enables column access.
WE
Write Enable
Enables write operation and row precharge.
Latches data in starting from CAS ,
WE
active.
相關(guān)PDF資料
PDF描述
M12L128324A-6BG 1M x 32 Bit x 4 Banks Synchronous DRAM
M12L128324A-6TG 1M x 32 Bit x 4 Banks Synchronous DRAM
M12L16161A-5TG 512K x 16Bit x 2Banks Synchronous DRAM
M12L16161A-7BG 512K x 16Bit x 2Banks Synchronous DRAM
M12L16161A-7TG 512K x 16Bit x 2Banks Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M12L128324A_09 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 32 Bit x 4 Banks Synchronous DRAM
M12L128324A_1 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 32 Bit x 4 Banks Synchronous DRAM
M12L128324A2E 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:JEDEC standard 3.3V power supply
M12L128324A-5BG2E 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:JEDEC standard 3.3V power supply
M12L128324A-6BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 32 Bit x 4 Banks Synchronous DRAM