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參數資料
| 型號： | M12L128324A-7TG |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 1M x 32 Bit x 4 Banks Synchronous DRAM |
| 中文描述： | 4M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86 |
| 封裝： | 0.400 INCH, LEAD FREE, TSOP2-86 |
| 文件頁數： | 6/47頁 |
| 文件大?。?/td> | 794K |
| 代理商： | M12L128324A-7TG |
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ES MT
M12L128324A
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2006
Revision
:
1.2
6/47
CAPACITANCE
(V
DD
= 3.3V, T
A
= 25
C
° , f = 1MHZ)
Parameter
Symbol
Min
Max
Unit
Input capacitance (A0 ~ A10, BA0 ~ BA1)
CIN1
2
4
pF
Input capacitance
(CLK, CKE, CS , RAS , CAS ,
WE
& DQM)
CIN2
2
4
pF
Data input/output capacitance (DQ0 ~ DQ31)
COUT
2
5
pF
DC CHARACTERISTICS
Recommended operating condition unless otherwise noted
，
T
A
= 0 to 70°
Version
Parameter
Symbol
Test Condition
CAS
Latency
-6
-7
Unit
Note
Operating Current
(One Bank Active)
I
CC1
Burst Length = 1
t
RC
≥
t
RC(min)
I
OL
= 0 mA
120
100
mA
1,2
I
CC2P
CKE
≤
V
IL
(max), tcc = 10ns
2
Precharge Standby Current
in power-down mode
I
CC2PS
CKE & CLK
≤
V
IL
(max), t
cc
=
∞
1
mA
I
CC2N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
cc
= 10ns
Input signals are changed one time during 20ns
25
Precharge Standby Current
in non power-down mode
I
CC2NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
cc
=
∞
input signals are stable
9
mA
I
CC3P
CKE
≤
V
IL
(max), tcc = 10ns
7
Active Standby Current
in power-down mode
I
CC3PS
CKE & CLK
≤
V
IL
(max), t
cc
=
∞
6
mA
I
CC3N
CKE
≥
VIH(min), CS
≥
V
IH
(min), tcc = 15ns
Input signals are changed one time during 30ns
30
mA
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), tcc =
∞
input signals are stable
15
mA
Operating Current
(Burst Mode)
I
CC4
IOL = 0 mA
Page Burst
2 Banks activated
t
CK
= t
CK(min)
270
240
mA
1,2
Refresh Current
Self Refresh Current
I
CC5
I
CC6
t
RC
≥
t
RC(min)
CKE
≤
0.2V
270
240
mA
mA
2
Note : 1. Measured with outputs open.
2. Input signals are changed one time during 2 CLKS.
相關PDF資料 |
PDF描述 |
|---|---|
| M12L128324A | 1M x 32 Bit x 4 Banks Synchronous DRAM |
| M12L128324A-6BG | 1M x 32 Bit x 4 Banks Synchronous DRAM |
| M12L128324A-6TG | 1M x 32 Bit x 4 Banks Synchronous DRAM |
| M12L16161A-5TG | 512K x 16Bit x 2Banks Synchronous DRAM |
| M12L16161A-7BG | 512K x 16Bit x 2Banks Synchronous DRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M12L128324A-7TIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 32 Bit x 4 Banks Synchronous DRAM |
| M12L16161A | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
| M12L16161A_05 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
| M12L16161A_08 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
| M12L16161A_1 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
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