參數(shù)資料
型號: M12L128324A-7TG
廠商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類: DRAM
英文描述: 1M x 32 Bit x 4 Banks Synchronous DRAM
中文描述: 4M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86
封裝: 0.400 INCH, LEAD FREE, TSOP2-86
文件頁數(shù): 45/47頁
文件大?。?/td> 794K
代理商: M12L128324A-7TG
ES MT
M12L128324A
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2006
Revision
:
1.2
45/47
PACKING
86 - LEAD
DIMENSIONS
TSOP(II)
DRAM(400mil)
Symbol
A
A1
A2
b
b1
c
c1
D
ZD
E
E1
L
L1
e
R1
R2
θ
θ
1
θ
2
θ
3
Dimension in mm
Norm
0.10
1.00
0.20
0.127
22.22 BSC
0.61 REF
11.76 BSC
10.16 BSC
0.50
0.80 REF
0.50 BSC
°
15
°
15
Dimension in inch
Norm
0.004
0.039
0.008
0.005
0.875 BSC
0.024 REF
0.463 BSC
0.400 BSC
0.020
0.031 REF
0.020 BSC
°
15
°
15
Min
Max
1.20
0.15
1.05
0.27
0.23
0.21
0.16
Min
Max
0.047
0.006
0.011
0.018
0.009
0.008
0.006
0.05
0.95
0.17
0.17
0.12
0.10
0.002
0.037
0.007
0.007
0.005
0.004
0.40
0.60
0.016
0.024
0.12
0.12
°
0
°
0
10
10
0.005
0.005
°
0
°
0
10
10
0.010
0.25
°
8
°
8
°
°
20
20
°
°
20
20
°
°
°
°
相關(guān)PDF資料
PDF描述
M12L128324A 1M x 32 Bit x 4 Banks Synchronous DRAM
M12L128324A-6BG 1M x 32 Bit x 4 Banks Synchronous DRAM
M12L128324A-6TG 1M x 32 Bit x 4 Banks Synchronous DRAM
M12L16161A-5TG 512K x 16Bit x 2Banks Synchronous DRAM
M12L16161A-7BG 512K x 16Bit x 2Banks Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M12L128324A-7TIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 32 Bit x 4 Banks Synchronous DRAM
M12L16161A 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM
M12L16161A_05 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM
M12L16161A_08 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM
M12L16161A_1 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM