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參數(shù)資料
| 型號(hào)： | M12L128324A-7TG |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 1M x 32 Bit x 4 Banks Synchronous DRAM |
| 中文描述： | 4M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86 |
| 封裝： | 0.400 INCH, LEAD FREE, TSOP2-86 |
| 文件頁數(shù)： | 31/47頁 |
| 文件大?。?/td> | 794K |
| 代理商： | M12L128324A-7TG |
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ES MT
M12L128324A
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2006
Revision
:
1.2
31/47
Note :
1. All input expect CKE & DQM can be don’t care when CS is high at the CLK high going edge.
2. Bank active @ read/write are controlled by BA0~BA1.
BA1
BA0
Active & Read/Write
0
0
Bank A
0
1
Bank B
1
0
Bank C
1
1
Bank D
3. Enable and disable auto precharge function are controlled by A10/AP in read/write command
A10/AP
BA1
BA0
Operating
0
0
Disable auto precharge, leave A bank active at end of burst.
0
1
Disable auto precharge, leave B bank active at end of burst.
1
0
Disable auto precharge, leave C bank active at end of burst.
0
1
1
Disable auto precharge, leave D bank active at end of burst.
0
0
Enable auto precharge , precharge bank A at end of burst.
0
1
Enable auto precharge , precharge bank B at end of burst.
1
0
Enable auto precharge , precharge bank C at end of burst.
1
1
1
Enable auto precharge , precharge bank D at end of burst.
4. A10/AP and BA0~BA1 control bank precharge when precharge is asserted.
A10/AP
BA1
BA0
Precharge
0
0
0
Bank A
0
0
1
Bank B
0
1
0
Bank C
0
1
1
Bank D
1
X
X
All Banks
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M12L128324A | 1M x 32 Bit x 4 Banks Synchronous DRAM |
| M12L128324A-6BG | 1M x 32 Bit x 4 Banks Synchronous DRAM |
| M12L128324A-6TG | 1M x 32 Bit x 4 Banks Synchronous DRAM |
| M12L16161A-5TG | 512K x 16Bit x 2Banks Synchronous DRAM |
| M12L16161A-7BG | 512K x 16Bit x 2Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M12L128324A-7TIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 32 Bit x 4 Banks Synchronous DRAM |
| M12L16161A | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
| M12L16161A_05 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
| M12L16161A_08 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
| M12L16161A_1 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
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