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參數(shù)資料
| 型號： | LRS1341 |
| 廠商： | Sharp Corporation |
| 英文描述： | Stacked Chip 16M Flash Memory and 2M SRAM |
| 中文描述： | 堆疊芯片1,600快閃記憶體以及2M SRAM |
| 文件頁數(shù)： | 7/24頁 |
| 文件大?。?/td> | 197K |
| 代理商： | LRS1341 |
Stacked Chip (16M Flash & 2M SRAM)
LRS1341/LRS1342
Data Sheet
7
ABSOLUTE MAXIMUM RATINGS
NOTES:
1. The maximum applicable voltage on any pins with respect to GND.
2. Except F-V
PP
.
3. Except F-RP.
4. -2.0 V undershoot is allowed when the pulse width is less than 20 ns.
5. +14.0 V overshoot is allowed when the pulse width is less than 20 ns.
RECOMMENDED DC OPERATING CONDITIONS
T
A
= -25
°
C to +85
°
C
NOTES:
1. V
CC
is the lower one of S-V
CC
and F-V
CC
.
2. -2.0 V undershoot is allowed when the pulse width is less than 20 ns.
3. This voltage is applicable to F-RP pin only.
PIN CAPACITANCE
T
A
= 25
°
C, f = 1 MHz
NOTE: *
Sampled by not 100% tested.
PARAMETER
SYMBOL
RATINGS
UNIT
NOTES
Supply voltage
Input voltage
Operating temperature
Storage temperature
F-V
PP
voltage
F-RP voltage
V
CC
V
IN
T
OPR
T
STG
F-V
PP
F-RP
-0.2 to +3.9
-0.2 to V
CC
+0.3
-25 to +85
-55 to +125
-0.2 to +14.0
-0.5 to +14.0
V
V
°
C
°
C
V
V
1, 2
1, 3, 4
1, 4, 5
1, 4, 5
PARAMETER
Supply voltage
SYMBOL
V
CC
V
IH
V
IL
V
HH
MIN.
2.7
2.2
-0.2
11.4
TYP.
3.0
MAX.
3.6
V
CC
+ 0.2
0.6
12.6
UNIT
V
V
V
V
NOTES
Input voltage
1
2
3
PARAMETER
Input capacitance*
I/O capacitance*
SYMBOL
C
IN
C
I/O
CONDITION
V
IN
= 0 V
V
I/O
= 0 V
MIN.
TYP.
MAX.
20
22
UNIT
pF
pF
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LRS1342 | 制造商:Sharp Microelectronics Corporation 功能描述:COMBO 1MX16 FLASH + 128KX16 SRAM 2.7V TO 3.6V 72FBGA - Trays |
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| LRS1360 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM |
| LRS1360C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MIXED MEMORY|SRAM+EEPROM|HYBRID|BGA|72PIN|PLASTIC |
| LRS1361B | 制造商:Sharp Microelectronics 功能描述:QUOTE B04419SC |
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