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參數(shù)資料
| 型號： | LRS1341 |
| 廠商： | Sharp Corporation |
| 英文描述： | Stacked Chip 16M Flash Memory and 2M SRAM |
| 中文描述： | 堆疊芯片1,600快閃記憶體以及2M SRAM |
| 文件頁數(shù)： | 11/24頁 |
| 文件大小： | 197K |
| 代理商： | LRS1341 |
Stacked Chip (16M Flash & 2M SRAM)
LRS1341/LRS1342
Data Sheet
11
Write Cycle (F-CE Controlled)
1
T
A
= -25
°
C to +85
°
C, V
CC
= 2.7 V to 3.6 V
NOTES:
1. Read timing characteristics during block erase and word write operations are the same as
during read-only operations. Refer to AC Characteristics for Read Cycle.
2. Refer to the
‘
Flash Memory Command Definition
’
section for valid A
IN
and D
IN
for block erase or word write.
Block Erase and Word Write Performance
T
A
= -25
°
C to +85
°
C, V
CC
= 2.7 V to 3.6 V
NOTES:
1. Reference values at T
A
= +25
°
C and V
CC
= 3.0 V, V
PP
= 3.0 V.
2. Excludes system-level overhead.
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
Write Cycle Time
t
AVAV
t
PHEL
t
WLEL
t
ELEH
t
PHEH
t
SHEH
t
VPEH
t
AVEH
t
DVEH
t
EHDX
t
EHAX
t
EHWH
t
EHEL
t
EHRL
t
EHGL
t
QVVL
t
QVPH
t
QVSL
100
ns
F-RP HIGH Recovery to F-CE going to LOW
10
μs
F-WE Setup to F-CE going LOW
0
ns
F-CE Pulse Width
70
ns
F-RP V
HH
Setup to F-CE going HIGH
F-WP V
IH
Setup to F-CE going HIGH
F-V
PP
Setup to F-CE going HIGH
Address Setup to F-CE going HIGH
2
Data Setup to F-CE going HIGH
2
100
ns
100
ns
100
ns
50
ns
50
ns
Data Hold from F-CE HIGH
0
ns
Address Hold from F-CE HIGH
0
ns
F-WE Hold from F-CE HIGH
0
ns
F-CE Pulse Width HIGH
25
ns
F-CE HIGH to F-RY/BY going LOW
100
ns
Write Recovery before Read
0
ns
F-V
PP
Hold from Valid SRD, F-RY/BY HIGH-Z
F-RP V
HH
Hold from Valid SRD, F-RY/BY HIGH-Z
F-WP V
IH
Hold from Valid SRD, F-RY/BY HIGH
0
ns
0
ns
0
ns
SYMBOL
PARAMETER
V
PP
= 2.7 V to 3.6 V
MIN.
TYP.
1
V
PP
= 11.4 V to 12.6 V
MIN.
TYP.
1
UNIT
NOTES
MAX.
MAX.
t
WHQV1
t
EHQV1
Word Write Time 32K-word Block
55
15
μs
2
Word Write Time 4K-word Block
60
30
μs
2
Block Write Time 32K-word Block
1.8
0.6
s
2
Block Write Time 4K-word Block
0.3
0.2
s
2
t
WHQV2
t
EHQV2
Block Erase Time 32K-word Block
1.2
0.7
s
2
Block Erase Time 4K-word Bock
0.5
0.5
s
2
t
WHRZ1
t
EHRZ1
t
WHRZ2
t
EHRZ2
Word Write Suspend Latency Time to Read
7.5
8.6
6.5
7.5
μs
Erase Suspend Latency Time to Read
19.3
23.6
11.8
15
μs
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LRS1342 | 制造商:Sharp Microelectronics Corporation 功能描述:COMBO 1MX16 FLASH + 128KX16 SRAM 2.7V TO 3.6V 72FBGA - Trays |
| LRS1348 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM |
| LRS1360 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM |
| LRS1360C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MIXED MEMORY|SRAM+EEPROM|HYBRID|BGA|72PIN|PLASTIC |
| LRS1361B | 制造商:Sharp Microelectronics 功能描述:QUOTE B04419SC |
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