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參數(shù)資料
| 型號： | LH28F032SUTD-70 |
| 英文描述： | x8/x16 Flash EEPROM Module |
| 中文描述： | x8/x16閃存EEPROM模塊 |
| 文件頁數(shù)： | 5/56頁 |
| 文件大?。?/td> | 373K |
| 代理商： | LH28F032SUTD-70 |
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LH28F160S5-L/S5H-L
- 5 -
PIN DESCRIPTION
SYMBOL
TYPE
NAME AND FUNCTION
ADDRESS INPUTS :
Inputs for addresses during read and write operations. Addresses
are internally latched during a write cycle.
A
0 :
Byte Select Address. Not used in x16 mode (can be floated).
A
1
-A
4 :
Column Address. Selects 1 of 16-bit lines.
A
5
-A
15 :
Row Address. Selects 1 of 2 048-word lines.
A
16
-A
20
: Block Address.
DATA INPUT/OUTPUTS :
DQ
0
-DQ
7 :
Inputs data and commands during CUI write cycles; outputs data during
memory array, status register, query, and identifier code read cycles. Data pins float to
high-impedance when the chip is deselected or outputs are disabled. Data is internally
latched during a write cycle.
DQ
8
-DQ
15 :
Inputs data during CUI write cycles in x16 mode; outputs data during memory
array read cycles in x16 mode; not used for statusregister, query and identifier code read
mode. Data pins float to high-impedance when the chip is deselected, outputs are
disabled, or in x8 mode (BYTE# = V
IL
). Data is internally latched during a write cycle.
CHIP ENABLE :
Activates the device’s control logic, input buffers decoders, and sense
amplifiers. Either CE
0
# or CE
1
# V
IH
deselects the device and reduces power
consumption to standby levels. Both CE
0
# and CE
1
# must be V
IL
to select the devices.
RESET/DEEP POWER-DOWN :
Puts the device in deep power-down mode and resets
internal automation. RP# V
IH
enables normal operation. When driven V
IL
, RP# inhibits
write operations which provide data protection during power transitions. Exit from deep
power-down sets the device to read array mode.
OUTPUT ENABLE :
Gates the device’s outputs during a read cycle.
WRITE ENABLE :
Controls writes to the CUI and array blocks. Addresses and data are
latched on the rising edge of the WE# pulse.
STS (RY/BY#) :
Indicates the status of the internal WSM. When configured in level
mode (default mode), it acts as a RY/BY# pin. When low, the WSM is performing an
internal operation (block erase, full chip erase, (multi) word/byte write or block lock-bit
configuration). STS High Z indicates that the WSM is ready for new commands, block
erase is suspended, and (multi) word/byte write is inactive, (multi) word/byte write is
suspended or the device is in deep power-down mode. For alternate configurations of
the STATUS pin, see the Configuration command (
Table 3
and
Section 4.14
).
WRITE PROTECT :
Master control for block locking. When V
IL
, locked blocks can not
be erased and programmed, and block lock-bits can not be set and reset.
BYTE ENABLE :
BYTE# V
IL
places device in x8 mode. All data are then input or output
on DQ
0-7
, and DQ
8-15
float. BYTE# V
IH
places the device in x16 mode, and turns off the
A
0
input buffer.
BLOCK ERASE, FULL CHIP ERASE, (MULTI) WORD/BYTE WRITE, BLOCK LOCK-
BIT CONFIGURATION POWER SUPPLY :
For erasing array blocks, writing bytes or
configuring block lock-bits. With V
PP
≤
V
PPLK
, memory contents cannot be altered. Block
erase, full chip erase, (multi) word/byte write and block lock-bit configuration with an
invalid V
PP
(see
Section 6.2.3 "DC CHARACTERISTICS"
) produce spurious results
and should not be attempted.
DEVICE POWER SUPPLY :
Internal detection configures the device for 5 V operation.
Do not float any power pins. With V
CC
≤
V
LKO
, all write attempts to the flash memory
are inhibited. Device operations at invalid V
CC
voltage (see
Section 6.2.3 "DC
CHARACTERISTICS"
) produce spurious results and should not be attempted.
GROUND :
Do not float any ground pins.
NO CONNECT :
Lead is not internal connected; recommend to be floated.
A
0
-A
20
INPUT
CE
0
#, CE
1
#
INPUT
RP#
INPUT
OE#
INPUT
WE#
INPUT
WP#
INPUT
BYTE#
INPUT
V
CC
SUPPLY
GND
NC
SUPPLY
DQ
0
-DQ
15
INPUT/
OUTPUT
OPEN
DRAIN
OUTPUT
STS
V
PP
SUPPLY
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