參數資料
型號： LH28F032SUTD-70
英文描述： x8/x16 Flash EEPROM Module
中文描述： x8/x16閃存EEPROM模塊
文件頁數： 11/56頁
文件大小： 373K
代理商： LH28F032SUTD-70
- 11 -
LH28F160S5-L/S5H-L
Table 2.1 Bus Operations (BYTE# = V
IH
)
RP#
CE
0
#
CE
1
#
V
IH
V
IL
V
IL
V
IH
V
IL
V
IL
V
IH
V
IH
V
IH
V
V
IL
V
IL
V
IH
V
IL
X
X
MODE
NOTE
1, 2, 3, 9
3
OE#
V
IL
V
IH
WE#
V
IH
V
IH
ADDRESS
X
X
V
PP
X
X
DQ
0-15
D
OUT
High Z
STS
X
X
Read
Output Disable
Standby
3
X
X
X
X
High Z
X
Deep Power-Down
Read Identifier
Codes
4
X
X
X
X
High Z
High Z
9
V
IH
V
IL
V
IL
V
IL
V
IH
See
Fig. 2
See
Table
6 through 10
X
X
(
NOTE 5)
High Z
Query
9
V
IH
V
IL
V
IL
V
IL
V
IH
X
(
NOTE 6)
High Z
Write
3, 7, 8, 9
V
IH
V
IL
V
IL
V
IH
V
IL
X
D
IN
X
Table 2.2 Bus Operations (BYTE# = V
IL
)
RP#
CE
0
#
CE
1
#
V
IH
V
IL
V
IL
V
IH
V
IL
V
IL
V
IH
V
IH
V
IH
V
IH
V
IL
V
IL
V
IH
V
IL
X
X
MODE
NOTE
1, 2, 3, 9
3
OE#
V
IL
V
IH
WE#
V
IH
V
IH
ADDRESS
X
X
V
PP
X
X
DQ
0-7
D
OUT
High Z
STS
X
X
Read
Output Disable
Standby
3
X
X
X
X
High Z
X
Deep Power-Down
Read Identifier
Codes
4
X
X
X
X
High Z
High Z
9
V
IH
V
IL
V
IL
V
IL
V
IH
See
Fig. 2
See
Table
6 through 10
X
X
(NOTE 5)
High Z
Query
9
V
IH
V
IL
V
IL
V
IL
V
IH
X
(NOTE 6)
High Z
Write
NOTES :
1.
Refer to
Section 6.2.3
"
DC CHARACTERISTICS
"
.
When V
PP
≤
V
PPLK
, memory contents can be read, but
not altered.
2.
X can be V
IL
or V
IH
for control pins and addresses, and
V
PPLK
or V
PPH1
for V
PP
. See
Section 6.2.3
"
DC
CHARACTERISTICS
"
for V
PPLK
and V
PPH1
voltages.
3.
STS is V
OL
(if configured to RY/BY# mode) when the
WSM is executing internal block erase, full chip erase,
(multi) word/byte write or block lock-bit configuration
algorithms. It is floated during when the WSM is not
busy, in block erase suspend mode with (multi)
word/byte write inactive, (multi) word/byte write suspend
mode, or deep power-down mode.
3, 7, 8, 9
V
IH
V
IL
V
IL
V
IH
V
IL
X
D
IN
X
4.
RP# at GND±0.2 V ensures the lowest deep power-
down current.
See
Section 4.2
for read identifier code data.
See
Section 4.5
for query data.
Command writes involving block erase, full chip erase,
(multi) word/byte write or block lock-bit configuration are
reliably executed when V
PP =
V
PPH1
and V
CC =
V
CC1/2
.
Refer to
Table 3
for valid D
IN
during a write operation.
Don’t use the timing both OE# and WE# are V
IL
.
5.
6.
7.
8.
9.
相關PDF資料
PDF描述
LH28F160BJB-BTL90 Flash ROM
LH28F160S3HNS-L10 Flash ROM
LH28F160S3HNS-L12 EEPROM
LH28F160S3HR-L10 x8/x16 Flash EEPROM
LH28F160S3HR-L13 EEPROM|FLASH|1MX16/2MX8|CMOS|TSSOP|56PIN|PLASTIC
相關代理商/技術參數
參數描述
LH28F040SUTD-Z4 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M (512K 】 8) Flash Memory
LH28F0I6SCT-L95 制造商:Sharp Microelectronics Corporation 功能描述:
LH28F128BFHT-PBTL75A 功能描述:閃存 128Mb (x16)3V OTP Single Supply RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
LH28F128SPHTD-PTLZ5 制造商:Sharp Microelectronics 功能描述:128M MULTI LEVEL CELL 120NS 制造商:Sharp Microelectronics Corporation 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 120NS 56TSOP - Trays
LH28F160BGH-TL 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:16 M-bit (1 MB x 16) Smart 3 Flash Memories
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*