參數(shù)資料
型號(hào): LH28F032SUTD-70
英文描述: x8/x16 Flash EEPROM Module
中文描述: x8/x16閃存EEPROM模塊
文件頁(yè)數(shù): 47/56頁(yè)
文件大?。?/td> 373K
代理商: LH28F032SUTD-70
SYMBOL
t
AVAV
PARAMETER
NOTE
MIN.
70
MAX.
MIN.
90
MAX.
MIN.
100
MAX.
Write Cycle Time
RP# High Recovery to CE#
Going Low
WE# Setup to CE# Going Low
CE# Pulse Width
WP# V
IH
Setup to CE# Going High
V
PP
Setup to CE# Going High
Address Setup to CE# Going High
Data Setup to CE# Going High
Data Hold from CE# High
Address Hold from CE# High
WE# Hold from CE# High
CE# Pulse Width High
CE# High to STS Going Low
Write Recovery before Read
V
PP
Hold from Valid SRD,
STS High Z
WP# V
IH
Hold from Valid SRD,
STS High Z
NOTES :
1.
In systems where CE# defines the write pulse width
(within a longer WE# timing waveform), all setup, hold
and inactive WE# times should be measured relative to
the CE# waveform.
2.
Sampled, not 100% tested.
3.
Refer to
Table 3
for valid A
IN
and D
IN
for block erase,
full chip erase, (multi) word/byte write or block lock-bit
configuration.
4.
V
PP
should be held at V
PPH1
until determination of block
erase, full chip erase, (multi) word/byte write or block
lock-bit configuration success (SR.1/3/4/5 = 0).
ns
t
PHEL
2
1
1
1
μs
t
WLEL
t
ELEH
t
SHEH
t
VPEH
t
AVEH
t
DVEH
t
EHDX
t
EHAX
t
EHWH
t
EHEL
t
EHRL
t
EHGL
0
50
100
100
40
40
5
5
0
25
0
50
100
100
40
40
5
5
0
25
0
50
100
100
40
40
5
5
0
25
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2
2
3
3
90
90
90
0
0
0
t
QVVL
2, 4
0
0
0
ns
t
QVSL
2, 4
0
0
0
ns
LH28F160S5-L/S5H-L
- 47 -
V
CC
= 5.0±0.25 V, 5.0±0.5 V, T
A
=
40 to +85°C
5.
See
Fig. 12
"
Transient Input/Output Reference
Waveform
" and
Fig. 14
"
Transient Equivalent Testing
Load Circuit
" (High Speed Configuration) for testing
characteristics.
See
Fig. 13
"
Transient Input/Output Reference
Waveform
" and
Fig. 14
"
Transient Equivalent Testing
Load Circuit
" (Standard Configuration) for testing
characteristics.
6.
VERSIONS
V
CC
±0.25 V
V
CC
±0.5 V
(NOTE 5)
LH28F160S5H-L70
(NOTE 6)
LH28F160S5H-L10
(NOTE 6)
LH28F160S5H-L70
UNIT
6.2.6 ALTERNATIVE CE#-CONTROLLED WRITES (contd.)
(NOTE 1)
[LH28F160S5H-L]
相關(guān)PDF資料
PDF描述
LH28F160BJB-BTL90 Flash ROM
LH28F160S3HNS-L10 Flash ROM
LH28F160S3HNS-L12 EEPROM
LH28F160S3HR-L10 x8/x16 Flash EEPROM
LH28F160S3HR-L13 EEPROM|FLASH|1MX16/2MX8|CMOS|TSSOP|56PIN|PLASTIC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LH28F040SUTD-Z4 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M (512K 】 8) Flash Memory
LH28F0I6SCT-L95 制造商:Sharp Microelectronics Corporation 功能描述:
LH28F128BFHT-PBTL75A 功能描述:閃存 128Mb (x16)3V OTP Single Supply RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
LH28F128SPHTD-PTLZ5 制造商:Sharp Microelectronics 功能描述:128M MULTI LEVEL CELL 120NS 制造商:Sharp Microelectronics Corporation 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 120NS 56TSOP - Trays
LH28F160BGH-TL 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:16 M-bit (1 MB x 16) Smart 3 Flash Memories