參數(shù)資料
型號： LH28F032SUTD-70
英文描述： x8/x16 Flash EEPROM Module
中文描述： x8/x16閃存EEPROM模塊
文件頁數(shù)： 37/56頁
文件大?。?/td> 373K
代理商： LH28F032SUTD-70
LH28F160S5-L/S5H-L
- 37 -
SYMBOL
PARAMETER
NOTE
V
CC =
5.0±0.5 V
TYP.
UNIT
TEST
MAX.
CONDITIONS
I
LI
Input Load Current
1
±1
μA
V
CC
= V
CC
Max.
V
IN
= V
CC
or GND
V
CC
= V
CC
Max.
V
OUT
= V
CC
or GND
CMOS Inputs
V
CC
= V
CC
Max.
CE# = RP# = V
CC
±0.2 V
TTL Inputs
V
CC
= V
CC
Max.
CE# = RP# = V
IH
RP# = GND±0.2 V
I
OUT
(STS) = 0 mA
CMOS Inputs
V
CC
= V
CC
Max.
CE# = GND
f = 8 MHz, I
OUT
= 0 mA
TTL Inputs
V
CC
= V
CC
Max.
CE# = V
IL
f = 8 MHz, I
OUT
= 0 mA
I
LO
Output Leakage Current
1
±10
μA
25
100
μA
I
CCS
V
CC
Standby Current
1, 3, 6
2
4
mA
I
CCD
V
CC
Deep Power-
Down Current
LH28F160S5-L
LH28F160S5H-L
1
15
20
μA
50
mA
I
CCR
V
CC
Read Current
1, 5, 6
65
mA
I
CCW
V
CC
Write Current
((Multi) W/B Write or Set Block Lock-Bit)
V
CC
Erase Current
(Block Erase, Full Chip Erase,
Clear Block Lock-Bits)
I
CCWS
V
CC
Write or Block Erase Suspend
I
CCES
Current
I
PPS
V
PP
Standby Current
I
PPR
V
PP
Read Current
I
PPD
V
PP
Deep Power-Down Current
V
PP
Write Current
((Multi) W/B Write or Set Block Lock-Bit)
V
PP
Erase Current
I
PPE
(Block Erase, Full Chip Erase,
Clear Block Lock-Bits)
I
PPWS
V
PP
Write or Block Erase Suspend
I
PPES
Current
1, 7
35
mA
V
PP
= 5.0±0.5 V
I
CCE
1, 7
30
mA
V
PP
= 5.0±0.5 V
1, 2
1
10
mA
CE# = V
IH
1
1
1
±2
10
0.1
±15
200
5
μA
μA
μA
V
PP
≤
V
CC
V
PP
> V
CC
RP# = GND±0.2 V
I
PPW
1, 7
80
mA
V
PP
= 5.0±0.5 V
1, 7
40
mA
V
PP
= 5.0±0.5V
1
10
200
μA
V
PP
= V
PPH1
6.2.3 DC CHARACTERISTICS
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