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參數(shù)資料
| 型號(hào)： | LC4384x |
| 廠商： | Lattice Semiconductor Corporation |
| 英文描述： | 3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs |
| 中文描述： | 3.3V/2.5V/1.8V在系統(tǒng)可編程超快高密度PDLs |
| 文件頁(yè)數(shù)： | 15/91頁(yè) |
| 文件大?。?/td> | 851K |
| 代理商： | LC4384X |
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Lattice Semiconductor
ispMACH 4000V/B/C/Z Family Data Sheet
15
Absolute Maximum Ratings
1, 2, 3
ispMACH 4000C/Z
(1.8V)
ispMACH 4000B
(2.5V)
ispMACH 4000V
(3.3V)
Supply Voltage (V
CC
) . . . . . . . . . . . . . . . . . . . . . . -0.5 to 2.5V . . . . . . . . . .-0.5 to 5.5V. . . . . . . . . . -0.5 to 5.5V
Output Supply Voltage (V
CCO
) . . . . . . . . . . . . . . . -0.5 to 4.5V . . . . . . . . . .-0.5 to 4.5V. . . . . . . . . . -0.5 to 4.5V
Input or I/O Tristate Voltage Applied
4, 5
. . . . . . . . . -0.5 to 5.5V . . . . . . . . . .-0.5 to 5.5V. . . . . . . . . . -0.5 to 5.5V
Storage Temperature . . . . . . . . . . . . . . . . . . . . . .-65 to 150
°
C. . . . . . . . . -65 to 150
°
C. . . . . . . . . .-65 to 150
°
C
Junction Temperature (T
j
) with Power Applied . . .-55 to 150
°
C. . . . . . . . . -55 to 150
°
C. . . . . . . . . .-55 to 150
°
C
1. Stress above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation of the device at these or any other conditions above those indicated in the operational sections of this speci
fi
cation
is not implied.
2. Compliance with Lattice
Thermal Management
document is required.
3. All voltages referenced to GND.
4. Undershoot of -2V and overshoot of (V
IH
(MAX) + 2V), up to a total pin voltage of 6.0V, is permitted for a duration of < 20ns.
5. Maximum of 64 I/Os per device with VIN > 3.6V is allowed.
Recommended Operating Conditions
Erase Reprogram Speci
fi
cations
Hot Socketing Characteristics
1,2,3
Symbol
Parameter
Min.
Max.
Units
V
CC
Supply Voltage for 1.8V Devices
ispMACH 4000C
1.65
1.95
V
ispMACH 4000Z
1.7
1.6
1, 2
1.9
V
ispMACH 4000Z, Extended Functional Voltage
Operation
1.9
V
Supply Voltage for 2.5V Devices
2.3
2.7
V
Supply Voltage for 3.3V Devices
3.0
3.6
V
T
j
Junction Temperature (Commercial)
0
90
C
Junction Temperature (Industrial)
-40
105
C
Junction Temperature (Automotive)
-40
130
C
1. Devices operating at 1.6V can expect performance degradation up to 35%.
2. Applicable for devices with 2004 datecodes and later. Contact factory for ordering instructions.
Parameter
Min.
Max.
Units
Erase/Reprogram Cycle
1,000
—
Cycles
Note: Valid over commercial temperature range.
Symbol
Parameter
Condition
Min.
Typ.
Max.
Units
I
DK
Input or I/O Leakage Current
0
≤
V
IN
≤
3.0V, Tj = 105°C
0
≤
V
IN
≤
3.0V, Tj = 130°C
—
±30
±150
μA
—
±30
±200
μA
1. Insensitive to sequence of V
CC
or V
CCO.
However, assumes monotonic rise/fall rates for V
CC
and V
CCO,
provided (V
IN
- V
CCO
)
≤
3.6V.
2. 0 < V
CC
< V
CC
(MAX), 0 < V
CCO
< V
CCO
(MAX).
3. I
DK
is additive to I
PU
, I
PD
or I
BH
. Device defaults to pull-up until fuse circuitry is active.
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