參數(shù)資料
型號: L6402MH10RI
廠商: Advanced Micro Devices, Inc.
英文描述: 128 Megabit (4 M x 32-Bit/8 M x 16-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with Versatile I/O⑩ Control
中文描述: 128兆位(4個M x 32位/八米x 16位),3.0伏的MirrorBit⑩只閃光均勻部門與通用的I / O控制記憶⑩
文件頁數(shù): 54/57頁
文件大?。?/td> 433K
代理商: L6402MH10RI
52
Am29LV6402M
January 23, 2006
AC CHARACTERISTICS
LATCHUP CHARACTERISTICS
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V, one pin at a time.
t
GHEL
t
WS
OE#
CE#
WE#
RESET#
t
DS
Data
t
AH
Addresses
t
DH
t
CP
DQ7#
D
OUT
t
WC
t
AS
t
CPH
PA
Data# Polling
A0 for program
55 for erase
t
RH
t
WHWH1 or 2
RY/BY#
t
WH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
t
BUSY
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# and DQ15# are the complement of the data written to the device. D
OUT
is the data written to the device.
4. Waveforms are for the word mode.
Figure 25.
Alternate CE# Controlled Write (Erase/Program)
Operation Timings
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
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