參數(shù)資料
型號(hào)： L6402MH10RI
廠商： Advanced Micro Devices, Inc.
英文描述： 128 Megabit (4 M x 32-Bit/8 M x 16-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with Versatile I/O⑩ Control
中文描述： 128兆位（4個(gè)M x 32位/八米x 16位），3.0伏的MirrorBit⑩只閃光均勻部門(mén)與通用的I / O控制記憶⑩
文件頁(yè)數(shù)： 3/57頁(yè)
文件大小： 433K
代理商： L6402MH10RI
Publication#
27552
Issue Date:
January 23, 2006
Rev:
B
Amendment/
1
Refer to AMD’s Website (www.amd.com) for the latest information.
Am29LV6402M
128 Megabit (4 M x 32-Bit/8 M x 16-Bit)
MirrorBit
3.0 Volt-only
Uniform Sector Flash Memory with Versatile I/O Control
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■
Single power supply operation
— 3 volt read, erase, and program operations
■
VersatileI/O
TM
control
— Device generates data output voltages and tolerates
data input voltages on the CE# and DQ inputs/outputs
as determined by the voltage on the V
IO
pin; operates
from 1.65 to 3.6 V
■
Manufactured on 0.23 μm MirrorBit
TM
process
technology
■
SecSi
(Secured Silicon) Sector region
— 128-doubleword/256-word sector for permanent,
secure identification through an
8-doubleword/16-word random Electronic Serial
Number, accessible through a command sequence
— May be programmed and locked at the factory or by
the customer
■
Flexible sector architecture
— One hundred twenty-eight 32 Kdoubleword (64
Kword) sectors
■
Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
■
100,000 erase cycles per sector
■
20-year data retention at 125
°
C
PERFORMANCE CHARACTERISTICS
■
High performance
— 100 ns access time
— 30 ns page read times
— 0.5 s typical sector erase time
— 22 μs typical write buffer doubleword programming
time: 16-doubleword/32-word write buffer reduces
overall programming time for multiple-word updates
— 4-doubleword/8-word page read buffer
— 16-doubleword/32-word write buffer
■
Low power consumption (typical values at 3.0 V, 5
MHz)
— 26 mA typical active read current
— 100 mA typical erase/program current
— 2 μA typical standby mode current
■
Package options
— 80-ball Fortified BGA
SOFTWARE & HARDWARE FEATURES
■
Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word or byte programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
■
Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Unprotect: V
ID
-level method of
changing code in locked sectors
— WP#/ACC input accelerates programming time
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
erase cycle completion
This product has been retired and is not available for designs. For new and current designs, S29GL128N supersedes Am29LV6402M and is the factory-recommended migration path. Please refer to
the S29GL128N Data Sheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only
.
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