參數(shù)資料
型號(hào): L6402MH10RI
廠商: Advanced Micro Devices, Inc.
英文描述: 128 Megabit (4 M x 32-Bit/8 M x 16-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with Versatile I/O⑩ Control
中文描述: 128兆位(4個(gè)M x 32位/八米x 16位),3.0伏的MirrorBit⑩只閃光均勻部門(mén)與通用的I / O控制記憶⑩
文件頁(yè)數(shù): 43/57頁(yè)
文件大?。?/td> 433K
代理商: L6402MH10RI
January 23, 2006
Am29LV6402M
41
AC CHARACTERISTICS
Read-Only Operations
Notes:
1. Not 100% tested.
2. See Figure 12 and Table 13 for test specifications.
3. AC Specifications are tested with V
IO
=V
CC
. Please contact
the factory for information on using the device with V
IO
V
CC
.
Parameter
Description
Test Setup
Speed Options
JEDEC
Std.
100R
110R
Unit
t
AVAV
t
RC
Read Cycle Time (Note 1)
Min
100
110
ns
t
AVQV
t
ACC
Address to Output Delay
CE#, OE# = V
IL
Max
100
110
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE# = V
IL
Max
100
110
ns
t
PACC
Page Access Time
Max
30
30
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max
30
30
ns
t
EHQZ
t
DF
Chip Enable to Output High Z (Note 1)
Max
25
ns
t
GHQZ
t
DF
Output Enable to Output High Z (Note 1)
Max
25
ns
t
AXQX
t
OH
Output Hold Time From Addresses, CE#
or OE#, Whichever Occurs First
Min
0
ns
t
OEH
Output Enable Hold
Time (Note 1)
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
t
OH
t
CE
Outputs
WE#
Addresses
CE#
OE#
HIGH Z
Output Valid
HIGH Z
Addresses Stable
t
RC
t
ACC
t
OEH
t
RH
t
OE
t
RH
0 V
RY/BY#
RESET#
t
DF
Figure 14.
Read Operation Timings
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