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參數(shù)資料
| 型號： | KM4132G271BQ(R)-7 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| 中文描述： | 128K的x 32位× 2銀行同步圖形RAM的LVTTL |
| 文件頁數(shù)： | 49/51頁 |
| 文件大?。?/td> | 1033K |
| 代理商： | KM4132G271BQ(R)-7 |
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KM4132G271B
CMOS SGRAM
- 49
Rev. 2.4 (May 1998)
FUNCTION TRUTH TABLE(TABLE 1, Continued)
Current
State
CS
RAS
CAS
WE
DSF
BA
(A
9
)
ADDR
ACTION
NOTE
Write
L
L
L
L
H
H
H
L
X
L
BA
BA
RA
PA
ILLEGAL
Term Burst : Precharge timing for Writes
2
3
L
L
H
L
L
L
X
H
H
L
X
H
L
X
X
H
H
X
X
X
X
X
X
X
X
X
X
X
ILLEGAL
ILLEGAL
NOP(Continue Burst to End --> Precharge)
NOP(Continue Burst to End --> Precharge)
Read with
Auto
Precharge
L
L
L
L
H
H
H
L
H
L
L
H
L
H
L
X
X
X
X
X
X
BA
BA
BA
X
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
CA,AP
CA,AP
RA,PA
2
2
L
H
L
L
L
X
H
H
L
X
H
H
X
X
H
L
X
X
X
X
X
X
X
X
X
X
X
X
ILLEGAL
NOP(Continue Burst to End --> Precharge)
NOP(Continue Burst to End --> Precharge)
ILLEGAL
2
Write with
Auto
Precharge
L
L
L
L
H
H
L
L
L
L
H
L
H
L
X
X
X
X
X
X
BA
BA
BA
X
CA,AP
CA,AP
RA,PA
X
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
NOP --> Idle after
t
RP
NOP --> Idle after
t
RP
ILLEGAL
ILLEGAL
2
2
2
Precharging
H
L
L
L
X
H
H
H
X
H
H
L
X
H
L
X
X
X
X
X
X
X
X
BA
X
X
X
CA,AP
2
L
L
L
H
L
L
L
X
H
H
L
X
H
L
X
X
X
X
X
X
BA
BA
X
X
RA
PA
X
X
ILLEGAL
NOP --> Idle after
t
RP
ILLEGAL
NOP --> Row Active after
t
BWC
NOP --> Row Active after
t
BWC
ILLEGAL
ILLEGAL
ILLEGAL
2
2
4
Block
Write
Recovering
L
L
L
L
H
H
H
L
H
H
L
H
H
L
X
H
X
X
X
X
X
X
BA
BA
X
X
CA,AP
RA
2
2
L
L
H
L
L
L
X
H
H
L
X
H
L
X
X
H
X
X
X
X
BA
X
X
X
PA
X
X
X
Term Block Write : Precharge timing for Block Write
ILLEGAL
NOP --> Row Active after
t
RCD
NOP --> Row Active after
t
RCD
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
2
2
Row
Activating
L
L
L
L
H
H
L
L
H
L
H
H
L
X
H
L
X
X
X
X
X
BA
BA
BA
X
CA,AP
RA
PA
2
2
2
L
H
L
L
L
L
X
H
H
L
L
X
H
L
H
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
ILLEGAL
NOP --> Idle after
t
RC
NOP --> Idle after
t
RC
ILLEGAL
ILLEGAL
2
Refreshing
L
L
L
X
X
X
X
ILLEGAL
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM4132G271BQR-7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| KM4132G271BQR-8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| KM4132G271BTQ(R)-10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| KM4132G271BTQ(R)-7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
| KM4132G271BTQ(R)-8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL |
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