參數(shù)資料
型號: KM4132G271BQ(R)-7
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
中文描述: 128K的x 32位× 2銀行同步圖形RAM的LVTTL
文件頁數(shù): 24/51頁
文件大?。?/td> 1033K
代理商: KM4132G271BQ(R)-7
KM4132G271B
CMOS SGRAM
- 24
Rev. 2.4 (May 1998)
*Note :
1. Active power down : one or more bank active state.
2. Precharge power down : both bank precharge state.
3. The auto refresh is the same as CBR refresh of conventional DRAM.
No precharge commands are required after Auto Refresh command.
During tRC from auto refresh command, any other command can not be accepted.
4. Before executing auto/self refresh command, both banks must be idle state.
5. (S)MRS, Bank Active, Auto/Self Refresh, Power Down Mode Entry.
6. During self refresh mode, refresh interval and refresh operation are perfomed internally.
After self refresh entry, self refresh mode is kept while CKE is LOW.
During self refresh mode, all inputs expect CKE will be don
t cared, and outputs will be in Hi-Z state.
During tRC from self refresh exit command, any other command can not be accepted.
Before/After self refresh mode, burst auto refresh cycle (1K cycles) is recommended.
10. Clock Suspend Exit & Power Down Exit
CLK
CKE
CMD
RD
1) Clock Suspend (=Active Power Down) Exit
t
SS
CLK
CKE
CMD
2) Power Down (=Precharge Power Down) Exit
Note 1
Note 5
Internal
CLK
ACT
t
SS
Note 2
Internal
CLK
11. Auto Refresh & Self Refresh
CLK
CMD
1) Auto Refresh
Note 3
CKE
PRE
AR
CMD
Note 4
t
RP
t
RC
ó
ó
ó
ó
CLK
CMD
2) Self Refresh
Note 6
CKE
PRE
SR
CMD
Note 4
t
RP
t
RC
ó
ó
ó
ó
ó
ó
NOP
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