參數(shù)資料
型號: KM4132G271A-12
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128K x 32Bit x 2 Banks Synchronous Graphic RAM
中文描述: 128K的x 32Bit的× 2銀行同步圖形內存
文件頁數(shù): 46/48頁
文件大小: 1000K
代理商: KM4132G271A-12
KM4132G271A
CMOS SGRAM
Rev.0 (August 1997)
FUNCTION TRUTH TABLE(TABLE 1, Continued)
Current
State
CS
RAS
CAS
WE
DSF
BA
(A
9
)
ADDR
ACTION
NOTE
Write
L
L
L
L
H
L
L
L
L
L
L
H
L
L
L
L
L
L
H
L
L
L
L
L
L
H
L
L
L
L
L
L
H
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
X
H
H
H
H
L
L
X
H
H
H
H
L
L
X
H
H
H
L
L
L
X
H
H
H
L
L
L
X
H
H
H
L
L
L
X
H
H
L
L
H
H
H
L
X
H
H
L
L
H
L
X
H
H
L
L
H
L
X
H
H
L
H
H
L
X
H
H
L
H
H
L
X
H
H
L
H
H
L
X
H
L
H
L
H
L
L
X
X
H
L
H
L
X
X
X
H
L
H
L
X
X
X
H
L
X
H
L
X
X
H
L
X
H
L
X
X
H
L
X
H
L
X
X
X
X
X
X
X
L
H
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
BA
BA
X
X
X
X
X
BA
BA
BA
X
X
X
X
BA
BA
BA
X
X
X
X
BA
BA
BA
X
X
X
X
BA
BA
BA
X
X
X
X
BA
BA
BA
X
X
X
X
X
X
RA
PA
X
X
X
X
X
ILLEGAL
Term Burst : Precharge timing for Writes
ILLEGAL
ILLEGAL
NOP(Continue Burst to End --> Precharge)
NOP(Continue Burst to End --> Precharge)
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
NOP(Continue Burst to End --> Precharge)
NOP(Continue Burst to End --> Precharge)
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
NOP --> Idle after
t
RP
NOP --> Idle after
t
RP
ILLEGAL
ILLEGAL
ILLEGAL
NOP --> Idle after
t
RP
ILLEGAL
NOP --> Row Active after
t
BWC
NOP --> Row Active after
t
BWC
ILLEGAL
ILLEGAL
ILLEGAL
Term Block Write : Precharge timing for Block Write
ILLEGAL
NOP --> Row Active after
t
RCD
NOP --> Row Active after
t
RCD
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
NOP --> Idle after
t
RC
NOP --> Idle after
t
RC
ILLEGAL
ILLEGAL
ILLEGAL
2
3
Read with
Auto
Precharge
CA,AP
CA,AP
RA,PA
X
X
X
X
CA,AP
CA,AP
RA,PA
X
X
X
X
CA,AP
RA
PA
X
X
X
X
CA,AP
RA
PA
X
X
X
X
CA,AP
RA
PA
X
X
X
X
X
X
2
2
2
Write with
Auto
Precharge
2
2
2
Precharging
2
2
2
4
Block
Write
Recovering
2
2
2
2
Row
Activating
2
2
2
2
Refreshing
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參數(shù)描述
KM4132G271A-8 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32Bit x 2 Banks Synchronous Graphic RAM
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