參數(shù)資料
型號: KM4132G271A-12
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128K x 32Bit x 2 Banks Synchronous Graphic RAM
中文描述: 128K的x 32Bit的× 2銀行同步圖形內(nèi)存
文件頁數(shù): 31/48頁
文件大?。?/td> 1000K
代理商: KM4132G271A-12
KM4132G271A
CMOS SGRAM
Rev.0 (August 1997)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
*Note 3
Page Read & Write Cycle at Same Bank @Burst Length=4
HIGH
Row Active
(A-Bank)
Read
(A-Bank)
Write
(A-Bank)
Precharge
(A-Bank)
1. To write data before burst read ends, DQM should be asserted three cycle prior to write
command to avoid bus contention.
2. Row precharge will interrupt writing. Last data input,
t
RDL
before Row precharge, will be written.
3. DQM should mask invalid input data on precharge command cycle when asserting precharge
before end of burst. Input data after Row precharge cycle will be masked internally.
Read
(A-Bank)
t
RCD
*Note 1
t
CDL
Qa0
Qa1
Qb0
Qb1
Qa0
Qa1
Qb0
Dc0
Dc1
Dd0
Dd1
Dc0
Dc1
Dd0
Dd1
Write
(A-Bank)
A
9
A
8
CL=2
CL=3
DQ
ADDR
CAS
RAS
CS
CKE
CLOCK
WE
DQM
Ra
Ca0
Cb0
Cc0
Cd0
Ra
DSF
t
RDL
*Note 2
: Don't care
*Note :
相關PDF資料
PDF描述
KM4132G271A-8 128K x 32Bit x 2 Banks Synchronous Graphic RAM
KM4132G271A 128K x 32Bit x 2 Banks Synchronous Graphic RAM
KM4132G271BTQ(R)-10 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
KM4132G271BTQ(R)-7 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
KM4132G271BTQ(R)-8 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
相關代理商/技術參數(shù)
參數(shù)描述
KM4132G271A-8 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32Bit x 2 Banks Synchronous Graphic RAM
KM4132G271AQ-10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32Bit x 2 Banks Synchronous Graphic RAM
KM4132G271B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
KM4132G271BQ(R)-10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
KM4132G271BQ(R)-7 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL