參數(shù)資料
型號(hào)： KM29N040IT
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512K x 8 Bit NAND Flash Memory(512K x 8位 NAND閃速存儲(chǔ)器)
中文描述： 為512k × 8位NAND閃存（為512k × 8位的NAND閃速存儲(chǔ)器）
文件頁(yè)數(shù)： 4/21頁(yè)
文件大小： 218K
代理商： KM29N040IT
KM29N040T, KM29N040IT
FLASH MEMORY
4
PRODUCT INTRODUCTION
The KM29N040 is a 4M bit memory organized as 4096 rows by 1024 columns. A 256-bit data register is connected to memory cell
arrays accommodating data transfer between the registers and the cell array during frame read and frame program operations. The
memory array is composed of unit NAND structures in which 8 cells are connected serially.
Each of the 8 cells reside in a different row. A block consists of the 32 rows, totaling 4096 NAND structures of 8bits each. The array
organization is shown in Figure 2. The program and read operations are executed on a frame basis, while the erase operation is e xe-
cuted on a block basis. The memory array consists of 128 separately erasable 4K-byte blocks.
The KM29N040 has addresses multiplexed into 8 I/O pins. This scheme not only reduces pin count but allows systems upgrades to
higher density flash memories by maintaining consistency in system board design. Command, address and data are all written
through I/O
′
s by bringing WE to low while CE is low. Data is latched on the rising edge of WE. Command Latch Enable(CLE) and
Address Latch Enable(ALE) are used to multiplex command and address respectively, via the I/O pins. All commands require one
bus cycle except for Block Erase command which requires two cycles. For byte-level addressing, the 512K byte physical space
requires a 19-bit address, low row address and high row address. Frame Read and frame Program require the same three address
cycles following by a command input. In the Block Erase operation, however, only the two row address cycles are required.
Device operations are selected by writing specific commands into the command register. Table 1 defines the specific commands of
the KM29N040.
Table 1. COMMAND SETS
Function
1st. Cycle
2nd. Cycle
Acceptable Command during Busy
Read
00h
-
Reset
FFh
-
O
Frame Program
80h
10h
Block Erase
60h
D0h
Status read
70h
-
O
Read ID
90h
-
相關(guān)PDF資料
PDF描述
KM29N040T 512K x 8 Bit NAND Flash Memory(512K x 8位 NAND閃速存儲(chǔ)器)
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KM29N16000AT 2Mx8 Bit NAND Flash Memory(2Mx8位 NAND閃速存儲(chǔ)器)
KM29N16000ATS 2M x 8 Bit NAND Flash Memory(2M x 8位 NAND閃速存儲(chǔ)器)
KM29N32000IT 4M x 8 Bit NAND Flash Memory(4M x 8位 NAND閃速存儲(chǔ)器)
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