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參數(shù)資料
| 型號： | KM29N040IT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512K x 8 Bit NAND Flash Memory(512K x 8位 NAND閃速存儲器) |
| 中文描述： | 為512k × 8位NAND閃存（為512k × 8位的NAND閃速存儲器） |
| 文件頁數(shù)： | 20/21頁 |
| 文件大小： | 218K |
| 代理商： | KM29N040IT |
KM29N040T, KM29N040IT
FLASH MEMORY
20
Figure 8. AC Waveforms for Power Transition
DATA PROTECTTION
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage dete ctor
disables all functions whenever Vcc is below about 2V. WP pin provides hardware protection and is recommended to be kept at V
IL
during power-up and power-down as shown in Figure 8. The two step command sequence for program/erase provides additional
software protection.
V
CC
WP
High
Figure 9. Read ID Operation
READ ID
The device contains a product identification mode, initiated by writing 90H to the command register, followed by an address inpu t of
00H. Two read cycles sequentially output the manufacture code(ECH), and the device code (Note*). The command register remains
in Read ID mode until further commands are issued to it. Figure 9 shows the operation sequence.
CE
CLE
I/O
0
~
7
ALE
RE
WE
90H
Add. Input(1Cycle)
Dout(ECH)
Dout(
Note*
)
A
0
~A
7
:"0"
Maker code
Device code
t
CR
t
WHRID
t
AR
t
REA
Note* : KM29V040 : A4H
KM29N040 : A4H
KM29W040 : A4H
≈
≈
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