參數(shù)資料
型號: KFN2G16Q2M-DED6
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: MuxOneNAND FLASH MEMORY
中文描述: MuxOneNAND閃存
文件頁數(shù): 41/124頁
文件大?。?/td> 1550K
代理商: KFN2G16Q2M-DED6
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
41
This Read register describes the device.
F001h, see table for default.
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
DeviceID
Device Identification
Device ID Default
Device Identification
Description
DeviceID [1:0] Vcc
00 = 1.8V, 01 = 2.65V/3.3V, 10/11 = reserved
DeviceID [2] Muxed/Demuxed
0 = Muxed, 1 = Demuxed
DeviceID [3] Single/DPP
0 = Single, 1 = DDP
DeviceID [6:4] Density
000 = 128Mb, 001 = 256Mb, 010 = 512Mb, 011 = 1Gb, 100 = 2Gb
Device
DeviceID[15:0]
KFM1G16Q2M
0030h
KFN2G16Q2M
0048h
2.8.3 Device ID Register F001h (R)
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