參數(shù)資料
型號： KFN2G16Q2M-DED6
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： MuxOneNAND FLASH MEMORY
中文描述： MuxOneNAND閃存
文件頁數(shù)： 104/124頁
文件大?。?/td> 1550K
代理商： KFN2G16Q2M-DED6
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
104
Parameter
Symbol
Min
Max
Unit
WE Cycle Time
t
WC
70
-
ns
AVD low pulse width
t
AVDP
12
-
ns
Address Setup Time
t
AAVDS
5
-
ns
Address Hold Time
t
AAVDH
7
-
ns
Data Setup Time
t
DS
30
-
ns
Data Hold Time
t
DH
0
-
ns
CE Setup Time
t
CS
0
-
ns
CE Hold Time
t
CH
0
-
ns
WE Pulse Width
t
WPL
40
-
ns
WE Pulse Width High
t
WPH
30
-
ns
WE Disable to AVD Enable
t
WEA
15
-
ns
CE Low to RDY Valid
t
CER
-
15
ns
These parameters are tested based on INT bit of interrupt register. Because the time on INT pin is related to the pull-up and pull-down resistor value.
Parameter
Symbol
Min
Typ
Max
Unit
Sector Load time(Note 1)
t
RD1
-
23
35
μ
s
Page Load time(Note 1)
t
RD2
-
30
45
μ
s
Sector Program time(Note 1)
t
PGM1
-
205
720
μ
s
Page Program time(Note 1)
t
PGM2
-
220
750
μ
s
OTP Access Time(Note 1)
t
OTP
-
500
700
ns
Lock/Unlock/Lock-tight Time(Note 1)
t
LOCK
-
500
700
ns
Erase Suspend Time(Note 1)
t
ESP
-
400
500
μ
s
Erase Resume Time(Note 1)
1 Block
t
ERS1
-
2
3
ms
2~64 Blocks
t
ERS2
4
6
ms
Number of Partial Program Cycles in the sector (Including main and
spare area)
NOP
-
-
2
cycles
Block Erase time (Note 1)
1 Block
t
BERS1
-
2
3
ms
2~64 Blocks
t
BERS2
-
4
6
ms
Multi BlocK Erase Verify Read time(Note 1)
t
RD3
-
70
100
μ
s
5.8 AC Characteristics for Load/Program/Erase Performance
See Timing Diagrams 6.6, 6.7, and 6.8
5.7 AC Characteristics for Asynchronous Write/Load/
Program/Erase Operation
See Timing Diagrams 6.5, 6.6, 6.7, and 6.8
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