參數(shù)資料
型號： KFH1G16Q2M-DID
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY
中文描述： 閃存
文件頁數(shù)： 77/93頁
文件大?。?/td> 1219K
代理商： KFH1G16Q2M-DID
OneNAND512/OneNAND1GDDP
FLASH MEMORY
77
AC TEST CONDITION
(V
CC
= 1.8V/2.65V/3.3V)
Parameter
Value
Input Pulse Levels
0V to V
CC
Input Rise and Fall Times
CLK
3ns
other inputs
5ns
Input and Output Timing Levels
V
CC
/2
Output Load
C
L
= 30pF
0V
V
CC
V
CC
/2
V
CC
/2
Input Pulse and Test Point
Input & Output
Test Point
CAPACITANCE
(T
A
= 25
°
C, V
CC
= 1.8V/2.65V/3.3V, f = 1.0MHz)
NOTE
: Capacitance is periodically sampled and not 100% tested.
Item
Symbol
Test Condition
Single
DDP
Unit
Min
Max
Min
Max
Input Capacitance
C
IN1
V
IN
=0V
-
10
-
20
pF
Control Pin Capacitance
C
IN2
V
IN
=0V
-
10
-
20
pF
Output Capacitance
C
OUT
V
OUT
=0V
-
10
-
20
pF
Output Load
Device
Under
Test
* C
L
= 30pF including scope
and Jig capacitance
VALID BLOCK
Note :
1. The
device
may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is pre-
sented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits
.
Do not erase or program
factory-marked bad blocks.
2. The 1st block, which is placed on 00h block address, is fully guaranteed to be a valid block.
Parameter
Symbol
Min
Typ.
Max
Unit
Valid Block Number
N
VB
502
-
512
Blocks
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