參數(shù)資料
型號: KFH1G16Q2M-DID
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY
中文描述: 閃存
文件頁數(shù): 48/93頁
文件大?。?/td> 1219K
代理商: KFH1G16Q2M-DID
OneNAND512/OneNAND1GDDP
FLASH MEMORY
48
Figure 10. Operations of NAND Flash Write Protection
Unlocked
Locked
> Command Sequence : Lock block command(002Ah)
> All blocks default to locked after Cold reset or Warm reset
> Partial block lock (a range) is not available ; Lock block operation
is only available for all blocks
> Unlocked blocks can be locked by using the Lock block
command and a lock block’s status can be changed to
unlock or lock-tight using the appropriate software commands
> Command Sequence :
Start block address+End block address+Unlock block command
(0023h)
> Unlocked block can be programmed or erased
> An unlocked block’s status can be changed to the locked or
lock-tighten state using the appropriate software command
> Only one sequential area can be released to unlock state from
lock state ; Unlocking multi area is not available
Lock-tighten
> Command Sequence : Lock-tight block command(002Ch)
> Lock-tighten blocks offer the user an additional level of write
protection beyond that of a regular lock block. A block that
is lock-tighten cannot have it’s state change by software,
only by Cold or Warm reset.
> Only locked blocks can be lock-tighten by Lock-tight command.
> Lock-tighten blocks revert to the locked state at Cold or Warm
reset
> Lock-tighten area does not change with any command;
when new unlock command is issued including the lock-tighten
area, new unlocked command is ignored.
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