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參數(shù)資料
| 型號(hào)： | IXFR44N50P |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | PolarHV HiPerFET Power MOSFET ISOPLUS247 |
| 中文描述： | 24 A, 500 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOPLUS247, 3 PIN |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 156K |
| 代理商： | IXFR44N50P |
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
IXFR 44N50P
Symbol
Test Conditions Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 20 V; I
D
= 22 A, Note 1
32
S
C
iss
C
oss
C
rss
5440
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
639
pF
40
pF
t
d(on)
t
r
t
d(off)
t
f
25
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 22 A
R
G
= 3
(External)
27
ns
70
ns
18
ns
Q
g(on)
Q
gs
Q
gd
98
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 22 A
35
nC
30
nC
R
thJC
R
thCS
0.6
°
C/W
0.15
°
C/W
Source-Drain Diode Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Test Conditions
Min.
Typ.
Max.
I
S
V
GS
= 0 V
30
A
I
SM
Repetitive
132
A
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1
1.5
V
t
rr
Q
RM
I
RM
V
R
= 100V 6.0 A
I
F
= 22 A,
-di/dt = 100 A/
μ
s
200
ns
0.6
μ
C
ISOPLUS247 Outline
Notes: 1. Pulse test, t
≤
300 ms, duty cycle d
≤
2 %
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
6,771,478 B2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXFR44N50Q | HiPerFET Power MOSFETs ISOPLUS247 Q-Class |
| IXFR48N50Q | HiPerFET Power MOSFETs ISOPLUS247 Q-Class |
| IXFR44N60 | HiPerFETTM Power MOSFETs ISOPLUS247 |
| IXFR44N80P | PolarHV HiPerFET Power MOSFET |
| IXFR4N100Q | HiPerFET Power MOSFETs ISOPLUS247 (Electrically Isolated Backside) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXFR44N50Q | 功能描述:MOSFET 34 Amps 500V 0.12 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFR44N50Q_03 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs ISOPLUS247, Q-Class |
| IXFR44N50Q3 | 功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 500V/25A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFR44N60 | 功能描述:MOSFET 600V 38A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFR44N80P | 功能描述:MOSFET DIODE Id26 BVdass800 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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