參數(shù)資料
型號(hào)： IXFR44N50P
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： PolarHV HiPerFET Power MOSFET ISOPLUS247
中文描述： 24 A, 500 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ISOPLUS247, 3 PIN
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 156K
代理商： IXFR44N50P
2006 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 175
°
C
T
J
= 25
°
C to 175
°
C; R
GS
= 1 M
500
500
V
V
V
GSM
V
GSM
Transient
Continuous
±
40
±
30
V
V
I
D25
I
DM
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
24
A
A
132
I
AR
E
AR
E
AS
44
55
1.7
A
mJ
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 10
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
10
V/ns
P
D
208
W
T
J
T
JM
T
stg
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
T
L
1.6 mm (0.062 in.) from case for 10 s
300
°
C
V
ISOL
50/60 Hz, RMS, 1 minute
2500
V~
F
C
Mounting Force
20..120 / 4.5..25
N/lb
Weight
5
g
DS99319E(03/06)
Symbol
(T
J
= 25
°
C, unless otherwise specified)
Test Conditions
Characteristic Values
Min. Typ.
Max.
BV
DSS
V
GS
= 0 V, I
D
= 250
μ
A
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.5
5.0
V
I
GSS
V
GS
=
±
30 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
25
μ
A
μ
A
T
J
= 125
°
C
500
R
DS(on)
V
GS
= 10 V, I
D
= 22 A
150 m
N-Channel Enhancement
Avalanche Rated
Fast Intrinsic Diode
IXFR 44N50P
V
DSS
I
D25
R
DS(on)
≤
150 m
t
rr
≤
200
= 500
= 24
V
A
ns
G = Gate
S = Source
D = Drain
ISOLATED TAB
G
D
S
ISOPLUS247 (IXFR)
E153432
Features
l
International standard isolated
package
l
UL recognized package
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
l
Fast intrinsic diode
Advantages
l
Easy to mount
l
Space savings
l
High power density
PolarHV
TM
HiPerFET
Power MOSFET
ISOPLUS247
TM
(Electrically Isolated Back Surface)
相關(guān)PDF資料
PDF描述
IXFR44N50Q HiPerFET Power MOSFETs ISOPLUS247 Q-Class
IXFR48N50Q HiPerFET Power MOSFETs ISOPLUS247 Q-Class
IXFR44N60 HiPerFETTM Power MOSFETs ISOPLUS247
IXFR44N80P PolarHV HiPerFET Power MOSFET
IXFR4N100Q HiPerFET Power MOSFETs ISOPLUS247 (Electrically Isolated Backside)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFR44N50Q 功能描述:MOSFET 34 Amps 500V 0.12 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR44N50Q_03 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs ISOPLUS247, Q-Class
IXFR44N50Q3 功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 500V/25A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR44N60 功能描述:MOSFET 600V 38A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR44N80P 功能描述:MOSFET DIODE Id26 BVdass800 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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