參數(shù)資料
型號： IXFR44N80P
廠商： IXYS CORP
元件分類： JFETs
英文描述： PolarHV HiPerFET Power MOSFET
中文描述： 25 A, 800 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ISOPLUS247, 3 PIN
文件頁數(shù)： 1/4頁
文件大?。?/td> 108K
代理商： IXFR44N80P
2006 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Ω
800
800
V
V
V
GS
V
GSM
Continuous
Transient
±
30
±
40
V
V
I
D25
I
DM
I
AR
E
AR
E
AS
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
25
A
A
100
25
80
3.4
A
mJ
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 10
Ω
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
10
V/ns
P
D
T
J
T
JM
T
stg
300
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
T
L
T
SOLD
V
ISOL
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
300
260
°
C
°
C
50/60 Hz, RMS, 1 minute
2500
V~
F
C
Mounting force
20..120 /4.5..25
N/lb
Weight
5
g
G = Gate
S = Source
D = Drain
Symbol
(T
J
= 25
°
C unless otherwise specified)
V
GS
= 0 V, I
D
= 800
μ
A
Test Conditions
Characteristic Values
Min. Typ.
Max.
BV
DSS
800
V
V
GS(th)
V
DS
= V
GS
, I
D
= 8 mA
3.0
5.0
V
I
GSS
V
GS
=
±
30 V, V
DS
= 0 V
±
200
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
50
1.5
μ
A
mA
T
J
= 125
°
C
R
DS(on)
V
GS
= 10 V, I
D
= I
T
, Note 1
200
m
Ω
PolarHV
TM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFR 44N80P
V
DSS
I
D25
R
DS(on)
≤
190 m
Ω
t
rr
= 800
=
V
A
25
≤
250
ns
DS99504E(06/06)
Isolated Tab
Electrically Isolated Tab
Features
z
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z
Low drain to tab capacitance(<30pF)
z
Low R
HDMOS
TM
process
z
Rugged polysilicon gate cell structure
z
Unclamped Inductive Switching (UIS)
rated
z
Fast intrinsic Rectifier
Applications
z
DC-DC converters
z
Battery chargers
z
Switched-mode and resonant-mode
power supplies
z
DC choppers
z
AC motor control
Advantages
z
Easy assembly
z
Space savings
z
High power density
ISOPLUS247 (IXFR)
E153432
相關(guān)PDF資料
PDF描述
IXFR4N100Q HiPerFET Power MOSFETs ISOPLUS247 (Electrically Isolated Backside)
IXFR50N50 N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓500V,導通電阻100mΩ的N溝道增強型HiPerFET功率MOSFET)
IXFR55N50F HiPerRF Power MOSFETs F-Class: MegaHertz Switching
IXFR58N20Q N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓200V,導通電阻40mΩ的N溝道增強型HiPerFET功率MOSFET)
IXFR70N15 N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓150V,導通電阻28mΩ的N溝道增強型HiPerFET功率MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFR48N50Q 功能描述:MOSFET 40 Amps 500V 0.1 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR48N60P 功能描述:MOSFET 600V 48A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR48N60Q3 功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 600V/32A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR4N100Q 功能描述:MOSFET 3.5 Amps 1000V 3 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR50N50 功能描述:MOSFET 43 Amps 500V 0.1 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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