參數(shù)資料
型號(hào)： IXFR55N50F
廠商： IXYS CORP
元件分類： JFETs
英文描述： HiPerRF Power MOSFETs F-Class: MegaHertz Switching
中文描述： 47 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ISOPLUS247, 3 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 499K
代理商： IXFR55N50F
2004 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
500
500
V
V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
I
DM
I
AR
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
45
A
A
A
220
55
E
AR
E
AS
dv/dt
T
C
= 25
°
C
T
C
= 25
°
C
I
S
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
60
3.0
mJ
J
10
V/ns
P
D
T
J
T
JM
T
stg
T
L
400
W
-40 ... +150
°
C
°
C
°
C
150
-40 ... +150
1.6 mm (0.063 in.) from case for 10 s
300
°
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
Weight
5
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 1mA
500
V
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±
20 V, V
DS
= 0
3.0
5.5 V
±
200 nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
V
= 10 V, I
D
= I
T
Notes 2, 3
T
J
= 25
°
C
T
J
= 125
°
C
100
μ
A
3 mA
90
m
R
DS(on)
DS98814C(06/04)
G = Gate
S = Source TAB = Electrically Isolated
D
= Drain
HiPerRF
TM
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated,
Low Q
g
,
Low Intrinsic R
g
High dV/dt,
Low t
rr
IXFR 55N50F V
DSS
= 500 V
= 55 A
I
D25
R
DS(on)
= 90
m
t
rr
≤
250 ns
Isolated backside*
ISOPLUS 247
TM
E153432
Features
z
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z
RF capable Mosfets
z
Low gate charge and capacitances
- easier to drive
-faster switching
z
Low drain to tab capacitance(<30pF)
z
Low R
DS (on)
HDMOS
TM
process
z
Rugged polysilicon gate cell structure
z
Rated for Unclamped Inductive Load
Switching (UIS)
z
Fast ntrinsic Rectifier
Applications
z
DC-DC converters
z
Battery chargers
z
Switched-mode and resonant-mode
power supplies
z
DC choppers
z
AC motor control
Advantages
z
Easy assembly
z
Space savings
z
High power density
相關(guān)PDF資料
PDF描述
IXFR58N20Q N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓200V,導(dǎo)通電阻40mΩ的N溝道增強(qiáng)型HiPerFET功率MOSFET)
IXFR70N15 N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓150V,導(dǎo)通電阻28mΩ的N溝道增強(qiáng)型HiPerFET功率MOSFET)
IXFR80N15Q N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓150V,導(dǎo)通電阻22.5mΩ的N溝道增強(qiáng)型HiPerFET功率MOSFET)
IXFR90N30 N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓300V,導(dǎo)通電阻33mΩ的N溝道增強(qiáng)型HiPerFET功率MOSFET)
IXFT10N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFR58N20 功能描述:MOSFET HiPerFET Power MOSFETs RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR58N20Q 功能描述:MOSFET 50 Amps 200V 0.04 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR64N50P 功能描述:MOSFET 500V 64A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR64N50Q3 功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 500V/45A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR64N60P 功能描述:MOSFET DIODE Id36 BVdass600 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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