- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383195 > IXFR90N30 (IXYS CORP) N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓300V,導(dǎo)通電阻33mΩ的N溝道增強型HiPerFET功率MOSFET) PDF資料下載
參數(shù)資料
| 型號： | IXFR90N30 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓300V,導(dǎo)通電阻33mΩ的N溝道增強型HiPerFET功率MOSFET) |
| 中文描述： | 75 A, 300 V, 0.033 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOPLUS247, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 55K |
| 代理商： | IXFR90N30 |
2000 IXYS All rights reserved
Isolated backside*
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
300
300
V
V
V
GS
V
GSM
Continuous
Transient
20
30
V
V
I
D25
I
DM
I
AR
T
C
= 25 C
T
C
= 25 C, Note 1
T
C
= 25 C
75
A
A
A
360
90
E
AR
E
AS
T
C
= 25 C
T
C
= 25 C
64
mJ
3
J
dv/dt
I
S
T
J
I
, di/dt 100 A/ s, V
DD
V
DSS
150 C, R
G
= 2
5
V/ns
P
D
T
C
= 25 C
400
W
T
J
T
JM
T
stg
T
L
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.063 in.) from case for 10 s
300
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
Weight
5
g
ISOPLUS 247
TM
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC & DC motor control
Advantages
Easy assembly
Space savings
High power density
Low noise to ground
G = Gate
S = Source
D = Drain
* Patent pending
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
A
I
GSS
V
GS
= 20 V, V
DS
= 0
100 nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25 C
T
J
= 125 C
100 A
2 mA
R
DS(on)
V
= 10 V, I
D
= I
T
Notes 2, 3
33 m
HiPerFET
TM
Power MOSFETs
ISOPLUS247
TM
(Electrically Isolated Back Surface)
98764 (11/00)
IXFR 90N30
V
DSS
I
D25
R
DS(on)
= 33
t
rr
250 ns
= 300
= 75
V
A
Single MOSFET Die
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXFT10N100 | N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family |
| IXFT12N100 | N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family |
| IXFT140N10P | PolarHV HiPerFET Power MOSFETs |
| IXFH140N10P | PolarHV HiPerFET Power MOSFETs |
| IXFT15N80Q | HiPerFET Power MOSFETs Q-Class |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXFR9N80Q | 功能描述:MOSFET 9 Amps 800V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFT10N100 | 功能描述:MOSFET 10 Amps 1000V 1.2 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFT10N100Q | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFETTM Power MOSFETs Q Class |
| IXFT120N15P | 功能描述:MOSFET 120 Amps 150V 0.016 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFT12N100 | 功能描述:MOSFET 12 Amps 1000V 1.05 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。