參數(shù)資料
型號： IXFR58N20Q
廠商： IXYS CORP
元件分類： JFETs
英文描述： N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓200V,導(dǎo)通電阻40mΩ的N溝道增強(qiáng)型HiPerFET功率MOSFET)
中文描述： 50 A, 200 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ISOPLUS247, 3 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 34K
代理商： IXFR58N20Q
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
200
200
V
V
V
GS
V
GSM
Continuous
Transient
20
30
V
V
I
D25
I
DM
I
AR
T
C
= 25 C
T
C
= 25 C, Note 1
T
C
= 25 C
50
232
58
A
A
A
E
AR
E
AS
T
C
= 25 C
T
C
= 25 C
30
1.0
mJ
J
dv/dt
I
S
T
J
I
, di/dt 100 A/ s, V
DD
V
DSS
150 C, R
G
= 2
5
V/ns
P
D
T
C
= 25 C
300
W
T
J
T
JM
T
stg
-55 ... +150
C
C
C
150
-55 ... +150
T
L
1.6 mm (0.062 in.) from case for 10 s
250
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
Weight
5
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
200
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250 A
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4mA
2.0
4.0 V
I
GSS
V
GS
= 20 V, V
DS
= 0
100 nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25 C
T
J
= 125 C
25 A
1 mA
R
DS(on)
V
= 10 V, I
D
= 29A
Note 2
40 m
98591A (03/24/00)
G
D
Advanced Technical Information
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<50pF)
IXYS advanced low Q
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic diode
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
Easy assembly
Space savings
High power density
G = Gate
S = Source
D = Drain
* Patent pending
Isolated back surface*
IXFR 58N20Q
V
DSS
I
D25
R
DS(on)
=
t
rr
= 200 V
=
50 A
40 m
200 ns
HiPerFET
TM
Power MOSFETs
ISOPLUS247
TM
Q-Class
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated, High dV/dt
Low Gate Charge and Capacitances
ISOPLUS 247
TM
E153432
IXYS reserves the right to change limits, test conditions, and dimensions.
相關(guān)PDF資料
PDF描述
IXFR70N15 N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓150V,導(dǎo)通電阻28mΩ的N溝道增強(qiáng)型HiPerFET功率MOSFET)
IXFR80N15Q N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓150V,導(dǎo)通電阻22.5mΩ的N溝道增強(qiáng)型HiPerFET功率MOSFET)
IXFR90N30 N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓300V,導(dǎo)通電阻33mΩ的N溝道增強(qiáng)型HiPerFET功率MOSFET)
IXFT10N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFR64N50P 功能描述:MOSFET 500V 64A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR64N50Q3 功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 500V/45A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR64N60P 功能描述:MOSFET DIODE Id36 BVdass600 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR64N60Q3 功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 600V/42A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR66N50Q2 功能描述:MOSFET 50 Amps 500V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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