參數(shù)資料
型號： IXFR50N50
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓500V,導通電阻100mΩ的N溝道增強型HiPerFET功率MOSFET)
中文描述： 43 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ISOPLUS247, 3 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 33K
代理商： IXFR50N50
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
500
500
V
V
V
GS
V
GSM
Continuous
Transient
20
30
V
V
I
D25
T
C
= 25 C
50N50
55N50
50N50
55N50
50N50
55N50
43
48
A
A
A
A
A
A
I
DM
T
C
= 25 C, Pulse width limited by T
JM
200
220
50
55
I
AR
T
C
= 25 C
E
AR
T
C
= 25 C
60
mJ
E
AS
T
C
= 25 C
3
J
dv/dt
I
S
T
J
T
C
= 25 C
I
, di/dt 100 A/ s, V
DD
V
DSS
150 C, R
G
= 2
5
V/ns
P
D
400
W
T
J
T
JM
T
stg
-55 ... +150
C
C
C
150
-55 ... +150
T
L
1.6 mm (0.063 in.) from case for 10 s
300
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
Weight
5
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
500
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 5mA
V
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 8mA
V
GS
= 20 V, V
DS
= 0
2
4 V
100 nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
V
= 10 V, I
D
= I
T
Note 1
T
J
= 25 C
T
J
= 125 C
50N50
55N50
100 A
2 mA
100 m
80 m
R
DS(on)
98588A (7/00)
ISOPLUS 247
TM
G
D
HiPerFET
TM
Power MOSFETs
ISOPLUS247
TM
(Electrically Isolated Back Surface)
Single MOSFET Die
G = Gate
S = Source
D = Drain
* Patent pending
V
DSS
500 V
500 V
t
rr
I
D25
43 A
48 A
R
DS(on)
100 m
80 m
IXFR 50N50
IXFR 55N50
250 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<50pF)
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
Easy assembly
Space savings
High power density
Preliminary data
相關PDF資料
PDF描述
IXFR55N50F HiPerRF Power MOSFETs F-Class: MegaHertz Switching
IXFR58N20Q N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓200V,導通電阻40mΩ的N溝道增強型HiPerFET功率MOSFET)
IXFR70N15 N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓150V,導通電阻28mΩ的N溝道增強型HiPerFET功率MOSFET)
IXFR80N15Q N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓150V,導通電阻22.5mΩ的N溝道增強型HiPerFET功率MOSFET)
IXFR90N30 N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓300V,導通電阻33mΩ的N溝道增強型HiPerFET功率MOSFET)
相關代理商/技術參數(shù)
參數(shù)描述
IXFR52N30Q 功能描述:MOSFET 52 Amps 300V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR55N50 功能描述:MOSFET 48 Amps 500V 0.08 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR55N50F 功能描述:MOSFET F -Class HiPerRF Capable MOSFETs RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR58N20 功能描述:MOSFET HiPerFET Power MOSFETs RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR58N20Q 功能描述:MOSFET 50 Amps 200V 0.04 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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