參數(shù)資料
型號(hào)： IXFR48N50Q
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： HiPerFET Power MOSFETs ISOPLUS247 Q-Class
中文描述： 40 A, 500 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ISOPLUS247, 3 PIN
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 58K
代理商： IXFR48N50Q
2002 IXYS All rights reserved
Isolated backside*
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
500
500
V
V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
T
C
= 25
°
C
44N50Q
48N50Q
44N50Q
48N50Q
44N50Q
48N50Q
34
40
A
A
A
A
A
A
I
DM
T
C
= 25
°
C, Note 1
176
192
44
48
I
AR
T
C
= 25
°
C
E
AR
E
AS
T
C
= 25
°
C
T
C
= 25
°
C
60
2.5
mJ
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 2
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
5
V/ns
P
D
T
C
= 25
°
C
310
W
T
J
T
JM
T
stg
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
T
L
1.6 mm (0.063 in.) from case for 10 s
300
°
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
Weight
5
g
ISOPLUS 247
TM
E153432
HiPerFET
TM
Power MOSFETs
ISOPLUS247
TM
, Q-Class
(Electrically Isolated Backside)
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
,
High dv/dt
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
IXYS advanced low Q
g
process
Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load
Switching (UIS)
Fast intrinsic diode
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
Easy assembly
Space savings
High power density
G = Gate
S = Source
D = Drain
* Patent pending
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250
μ
A
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4
m
A
2.0
4.0 V
I
GSS
V
GS
=
±
20 V, V
DS
= 0
±
100 nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
100
μ
A
2 mA
T
J
= 125
°
C
R
DS(on)
V
GS
= 10 V, I
D
= I
T
Notes 2, 3
44N50Q
48N50Q
120 m
110 m
V
DSS
500 V 34 A 120 m
500 V 40 A 110 m
t
rr
≤
250 ns
I
D25
R
DS(on)
IXFR 44N50Q
IXFR 48N50Q
98702B (6/02)
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFR48N60P 功能描述:MOSFET 600V 48A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR48N60Q3 功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 600V/32A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR4N100Q 功能描述:MOSFET 3.5 Amps 1000V 3 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR50N50 功能描述:MOSFET 43 Amps 500V 0.1 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR52N30Q 功能描述:MOSFET 52 Amps 300V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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