參數(shù)資料
型號： IXFR200N10P
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： PolarTM HiPerFET Power MOSFET
中文描述： 133 A, 100 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ISOPLUS247, 3 PIN
文件頁數(shù)： 1/5頁
文件大小： 565K
代理商： IXFR200N10P
2005 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 175
°
C
T
J
= 25
°
C to 175
°
C; R
GS
= 1 M
100
V
100
V
V
GS
V
GSM
±
20
±
30
V
V
I
D25
I
D(RMS)
I
DM
T
C
= 25
°
C
External lead current limit
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
133
A
75
A
400
A
I
AR
60
A
E
AR
E
AS
100
mJ
4
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 4
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
10
V/ns
P
D
T
J
T
JM
T
stg
350
W
-55 ... +175
°
C
°
C
°
C
175
-55 ... +150
V
ISOL
50/60 Hz, RMS, 1 minute
2500
V~
F
C
Mounting Force
20..120/4.6..20
Nm/lb
Weight
5
g
Symbol
(T
J
= 25
°
C, unless otherwise specified)
V
GS
= 0 V, I
D
= 250
μ
A
Test Conditions
Characteristic Values
Min. Typ.
Max.
V
DSS
100
V
V
GS(th)
V
DS
= V
GS
, I
D
= 500
μ
A
3.0
5.0
V
I
GSS
V
GS
=
±
30 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 0 V
25
μ
A
μ
A
μ
A
T
J
= 150
°
C
T
J
= 175
°
C
250
1000
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
V
= 15 V, I
D
= 400A
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
8
m
m
5.5
G = Gate
S = Source
D = Drain
DS99239(06/05)
Polar
TM
HiPerFET
Power MOSFET
Electrically Isolated Tab
IXFR 200N10P
Advanced Technical Information
N-Channel Enhancement Mode
Fast Recovery Diode, Avavanche Rated
V
DSS
I
D25
R
DS(on)
= 8
= 100 V
= 133 A
m
ISOLATED TAB
S
GD
ISOPLUS247 (IXFR)
E153432
Features
z
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z
Low drain to tab capacitance(<30pF)
z
Fast recovery intrinsic diode
Applications
z
DC-DC converters
z
Battery chargers
z
Switched-mode and resonant-mode
power supplies
z
DC choppers
z
AC motor control
Advantages
z
Easy assembly
z
Space savings
z
High power density
相關PDF資料
PDF描述
IXFR24N100 N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓1000V,導通電阻0.39Ω的N溝道增強型HiPerFET功率MOSFET)
IXFR26N50Q N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓500V,導通電阻0.20Ω的N溝道增強型HiPerFET功率MOSFET)
IXFR26N60Q N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓600V,導通電阻250mΩ的N溝道增強型HiPerFET功率MOSFET)
IXFR30N50 HiPerFET Power MOSFETs ISOPLUS247
IXFR30N50Q HiPerFET Power MOSFETs ISOPLUS247
相關代理商/技術參數(shù)
參數(shù)描述
IXFR200N10P_06 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Polar HiPerFET Power MOSFET
IXFR20N100P 功能描述:MOSFET 20 Amps 1000V 1 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR20N120P 功能描述:MOSFET 26 Amps 1200V 1 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR20N80P 功能描述:MOSFET 10 Amps 800V 0.5 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR21N100Q 功能描述:MOSFET 18 Amps 1000V 0.5 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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