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參數(shù)資料
| 型號： | IXFR26N60Q |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓600V,導(dǎo)通電阻250mΩ的N溝道增強(qiáng)型HiPerFET功率MOSFET) |
| 中文描述： | 23 A, 600 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOPLUS247, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 34K |
| 代理商： | IXFR26N60Q |
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
600
600
V
V
V
GS
V
GSM
Continuous
Transient
20
30
V
V
I
D25
I
DM
I
AR
T
C
= 25 C
T
C
= 25 C, Note 1
T
C
= 25 C
23
92
26
A
A
A
E
AR
E
AS
T
C
= 25 C
T
C
= 25 C
45
1.5
mJ
J
dv/dt
I
S
T
J
I
, di/dt 100 A/ s, V
DD
V
DSS
150 C, R
G
= 2
5
V/ns
P
D
T
C
= 25 C
310
W
T
J
T
JM
T
stg
T
L
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.063 in.) from case for 10 s
250
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
Weight
5
g
ISOPLUS 247
TM
E153432
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
IXYS advanced low Q
process
Low gate charge and capacitances
- easier to drive
- faster switching
Low drain to tab capacitance(<30pF)
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load
Switching (UIS)
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC & DC motor control
Advantages
Easy assembly
Space savings
High power density
G = Gate
S = Source
D = Drain
* Patent pending
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250 A
600
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4mA
2.5
4.5 V
I
GSS
V
GS
= 20 V, V
DS
= 0
100 nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25 C
T
J
= 125 C
25 A
1 mA
R
DS(on)
V
= 10 V, I
D
= I
T
Notes 2, 3
250 m
HiPerFET
TM
Power MOSFETs
ISOPLUS247
TM
Q-CLASS
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalance Rated, High dV/dt
Low Gate Charge and Capacitances
98727 (06/09/00)
IXFR 26N60Q
V
DSS
I
D25
R
DS(on)
= 250 m
t
rr
250 ns
= 600
= 23
V
A
IXYS reserves the right to change limits, test conditions, and dimensions.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXFR30N50 | HiPerFET Power MOSFETs ISOPLUS247 |
| IXFR30N50Q | HiPerFET Power MOSFETs ISOPLUS247 |
| IXFR32N50Q | HiPerFET Power MOSFETs ISOPLUS247 |
| IXFR38N80Q2 | Electrically Isolated Back Surface |
| IXFR40N50Q2 | HiPerFET Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXFR27N80Q | 功能描述:MOSFET 27 Amps 800V 0.35W Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFR30N110P | 功能描述:MOSFET 30 Amps 1100V 0.4000 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFR30N50 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs ISOPLUS247 |
| IXFR30N50Q | 功能描述:MOSFET 30 Amps 500V 0.16 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFR30N60P | 功能描述:MOSFET 600V 30A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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