參數(shù)資料
型號： IXFR30N50Q
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： HiPerFET Power MOSFETs ISOPLUS247
中文描述： 30 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ISOPLUS247, 3 PIN
文件頁數(shù)： 1/4頁
文件大?。?/td> 92K
代理商： IXFR30N50Q
1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
500
500
V
V
V
GS
V
GSM
Continuous
Transient
20
30
V
V
I
D25
T
C
= 25 C
30N50
32N50
30N50
32N50
30N50
32N50
30
A
I
DM
T
C
= 25 C, Pulse width limited by T
JM
120
A
I
AR
T
C
= 25 C
30
A
E
AS
E
AR
T
C
= 25 C
T
C
= 25 C
1.5
45
J
mJ
dv/dt
I
S
T
J
I
, di/dt 100 A/ s, V
DD
V
DSS
150 C, R
G
= 2
5
V/ns
P
D
T
C
= 25 C
310
W
T
J
T
JM
T
stg
-55 ... +150
C
C
C
150
-55 ... +150
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
V
ISOL
50/60 Hz, RMS
t = 1 minute leads-to-tab
2500
V~
Weight
6
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
500
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 1mA
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4mA
2
4
V
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
V
GS
= 0 V
T
J
= 25 C
T
J
= 125 C
100
1
A
mA
R
DS(on)
V
= 10 V, I
D
= I
T
Notes 1, 2
30N50
32N50
0.16
0.15
98608B (7/00)
ISOPLUS 247
TM
E 153432
G
D
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<50pF)
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
Easy assembly
Space savings
High power density
G = Gate
S = Source
D = Drain
* Patent pending
Isolated back surface*
V
DSS
500 V
500 V
I
D25
29 A
30 A
R
DS(on)
0.16
0.15
IXFR 30N50Q
IXFR 32N50Q
t
rr
250 ns
HiPerFET
TM
Power MOSFETs
ISOPLUS247
TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
High dV/dt, Low t
rr
, HDMOS
TM
Family
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
相關(guān)PDF資料
PDF描述
IXFR32N50Q HiPerFET Power MOSFETs ISOPLUS247
IXFR38N80Q2 Electrically Isolated Back Surface
IXFR40N50Q2 HiPerFET Power MOSFETs
IXFR44N50P PolarHV HiPerFET Power MOSFET ISOPLUS247
IXFR44N50Q HiPerFET Power MOSFETs ISOPLUS247 Q-Class
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFR30N60P 功能描述:MOSFET 600V 30A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR32N100P 功能描述:MOSFET 32 Amps 1000V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR32N100Q3 功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/23A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR32N50Q 功能描述:MOSFET 30 Amps 500V 0.15 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR32N50Q_04 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs ISOPLUS247
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