參數(shù)資料
型號： IXFR38N80Q2
廠商： IXYS CORP
元件分類： JFETs
英文描述： Electrically Isolated Back Surface
中文描述： 28 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, ISOPLUS247, 3 PIN
文件頁數(shù)： 1/5頁
文件大?。?/td> 568K
代理商： IXFR38N80Q2
2004 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Continuous
Transient
800
800
V
V
±
30
±
40
V
V
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
28
A
A
A
150
38
E
AR
E
AS
T
C
= 25
°
C
T
C
= 25
°
C
75
4.0
mJ
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
20
V/ns
P
D
T
J
T
JM
T
stg
416
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
T
L
1.6 mm (0.063 in) from case for 10 s
300
°
C
V
ISOL
50/60 Hz, RMS, t = 1 min
I
SOL
= 1mA, t = 1 s
Mounting Force
2500
3000
V~
V~
F
C
Weight
5
g
HiPerFET
TM
MOSFET
Q2-Class
(Electrically Isolated Back Surface)
Features
z
Double metal process for low gate
resistance
z
Silicon chip on DCB substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z
Epoxy
meet
UL
94
V-0, flammability
classification
z
Avalanche energy and current rated
z
Fast intrinsic Rectifier
Advantages
z
Easy assembly
z
Space savings
z
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
±
30 V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
= 10 V, I
D
= I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
800
2.0
V
V
4.5
±
200
nA
T
J
= 25
°
C
T
J
= 125
°
C
50
2
μ
A
mA
R
DS(on)
240 m
G = Gate
S = Source
D = Drain
DS99203(09/04)
Isolated Back
Surface
V
DSS
I
D25
R
DS(on)
t
rr
≤
250 ns
= 800 V
= 28 A
= 240 m
IXFR 38N80Q2
ISOPLUS247 (IXFR)
GD
Preliminary Data Sheet
50
相關(guān)PDF資料
PDF描述
IXFR40N50Q2 HiPerFET Power MOSFETs
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IXFR44N50Q HiPerFET Power MOSFETs ISOPLUS247 Q-Class
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFR38N80Q2_08 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFET Q2-Class
IXFR40N50Q2 功能描述:MOSFET 500V 30A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR40N50Q2_08 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFET Q2-Class
IXFR40N90P 功能描述:MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR44N50P 功能描述:MOSFET 500V 44A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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