參數(shù)資料
型號： IXFR40N50Q2
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： HiPerFET Power MOSFETs
中文描述： 29 A, 500 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, ISOPLUS247, 3 PIN
文件頁數(shù)： 1/5頁
文件大?。?/td> 570K
代理商： IXFR40N50Q2
2004 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Continuous
Transient
500
500
V
V
±
30
±
40
V
V
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
29
A
A
A
160
40
E
AR
E
AS
T
C
= 25
°
C
T
C
= 25
°
C
50
2.5
mJ
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
20
V/ns
P
D
T
J
T
JM
T
stg
320
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
T
L
1.6 mm (0.063 in) from case for 10 s
300
°
C
F
C
Mounting force
22...130/5...30
N/lb.
Weight
5
g
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated,
Low Q
g
Low R
g
, High dv/dt, Low t
rr
Features
z
Double metal process for low gate
resistance
z
International standard packages
z
Epoxy
meet
UL
94
V-0, flammability
classification
z
Low R
,
low Q
z
Avalanche energy and current rated
z
Fast intrinsic rectifier
Applications
z
DC-DC converters
z
Switched-mode and resonant-mode
power supplies, >500kHz switching
z
DC choppers
z
Pulse generation
z
Laser drivers
Advantages
z
Easy to mount
z
Space savings
z
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±
30 V
DC
, V
DS
= 0
V
DS
= V
V
GS
= 0 V
V
= 10 V, I
D
= I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
500
2.5
V
V
5.0
±
200
nA
T
J
= 25
°
C
T
J
= 125
°
C
25
μ
A
mA
1
R
DS(on)
0.17
DS99075B(05/04)
IXFR40N50Q2
V
DSS
I
D25
R
DS(on)
= 500 V
= 29 A
= 0.17
t
rr
≤
250 ns
G = Gate
S = Source
D = Drain
TAB = Isolated
G
D
S
(TAB)
Preliminary Data Sheet
ISOPLUS247 (IXFR)
E153432
相關(guān)PDF資料
PDF描述
IXFR44N50P PolarHV HiPerFET Power MOSFET ISOPLUS247
IXFR44N50Q HiPerFET Power MOSFETs ISOPLUS247 Q-Class
IXFR48N50Q HiPerFET Power MOSFETs ISOPLUS247 Q-Class
IXFR44N60 HiPerFETTM Power MOSFETs ISOPLUS247
IXFR44N80P PolarHV HiPerFET Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFR40N50Q2_08 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFET Q2-Class
IXFR40N90P 功能描述:MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR44N50P 功能描述:MOSFET 500V 44A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR44N50Q 功能描述:MOSFET 34 Amps 500V 0.12 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR44N50Q_03 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs ISOPLUS247, Q-Class
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