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參數資料
| 型號： | IXFR24N100 |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓1000V,導通電阻0.39Ω的N溝道增強型HiPerFET功率MOSFET) |
| 中文描述： | 22 A, 1000 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, ISOPLUS247, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 33K |
| 代理商： | IXFR24N100 |
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
1000
1000
V
V
V
GS
V
GSM
Continuous
Transient
20
30
V
V
I
D25
I
DM
I
AR
T
C
= 25 C
T
C
= 25 C, Note 1
T
C
= 25 C
22
96
24
A
A
A
E
AR
E
AS
T
C
= 25 C
T
C
= 25 C
60
3
mJ
J
dv/dt
I
S
T
J
I
, di/dt 100 A/ s, V
DD
V
DSS
150 C, R
G
= 2
5
V/ns
P
D
T
C
= 25 C
400
W
T
J
T
JM
T
stg
-55 ... +150
C
C
C
150
-55 ... +150
T
L
1.6 mm (0.063 in.) from case for 10 s
300
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
Weight
5
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
1000
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3mA
V
V
GS(th)
V
DS
= V
GS
, I
D
= 8mA
2.5
5.0 V
I
GSS
V
GS
= 20 V, V
DS
= 0
100 nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25 C
T
J
= 125 C
100 A
2 mA
R
DS(on)
V
= 10 V, I
D
= 24A
Note 1
0.39
Single MOSFET Die
98599 (3/99)
ISOPLUS 247
TM
G
D
Advanced Technical Information
HiPerFET
TM
Power MOSFETs
ISOPLUS247
TM
(Electrically Isolated Back Surface)
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
Easy assembly
Space savings
High power density
G = Gate
S = Source
D = Drain
* Patent pending
Isolated back surface*
IXFR 24N100
V
DSS
I
D25
R
DS(on)
= 0.39
t
rr
250 ns
= 1000 V
= 22 A
IXYS reserves the right to change limits, test conditions, and dimensions.
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| IXFR26N60Q | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓600V,導通電阻250mΩ的N溝道增強型HiPerFET功率MOSFET) |
| IXFR30N50 | HiPerFET Power MOSFETs ISOPLUS247 |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IXFR24N100_08 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFET ISOPLUS247 |
| IXFR24N100Q3 | 功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFR24N50 | 功能描述:MOSFET 22 Amps 500V 0.23 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFR24N50Q | 功能描述:MOSFET 22 Amps 500V 0.23 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFR24N80P | 功能描述:MOSFET 14 Amps 800V 0.42 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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