參數(shù)資料
型號： IXFR26N50Q
廠商： IXYS CORP
元件分類： JFETs
英文描述： N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓500V,導(dǎo)通電阻0.20Ω的N溝道增強型HiPerFET功率MOSFET)
中文描述： 24 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ISOPLUS247, 3 PIN
文件頁數(shù)： 1/2頁
文件大小： 79K
代理商： IXFR26N50Q
2001 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
500
500
V
V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
T
C
= 25
°
C
26N50Q
24N50Q
26N50Q
24N50Q
26N50Q
24N50Q
24
22
A
A
A
A
A
A
I
DM
T
C
= 25
°
C, Pulse width limited by T
JM
104
96
26
24
I
AR
T
C
= 25
°
C
E
AR
E
AS
T
C
= 25
°
C
T
C
= 25
°
C
30
1.5
mJ
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 2
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
5
V/ns
P
D
T
C
= 25
°
C
250
W
T
J
T
JM
T
stg
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
T
L
1.6 mm (0.062 in.) from case for 10 s
300
°
C
V
ISOL
50/60 Hz, RMS
t = 1 minute leads-to-tab
2500
V~
Weight
5
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
500
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250uA
V
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
±
20 V
DC
, V
DS
= 0
2.5
4.5
±
100
V
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= I
T
Notes 1 & 2
T
J
= 25
°
C
T
J
= 125
°
C
26N50Q
24N50Q
25
1
μ
A
mA
R
DS(on)
0.20
0.23
G
D
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<35pF)
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
Easy assembly: no screws, or isolation
foils required
Space savings
High power density
Low collector capacitance to ground
(low EMI)
G = Gate
S = Source
D = Drain
* Patent pending
Isolated back surface*
V
DSS
500 V
500 V
I
D25
24 A
22 A
R
DS(on)
0.20
0.23
IXFR 26N50Q
IXFR 24N50Q
t
rr
≤
250 ns
HiPerFET
TM
Power MOSFETs
ISOPLUS247
TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
High dV/dt,
Low t
rr
, HDMOS
TM
Family
ISOPLUS 247
TM
E153432
98664A (5/01)
相關(guān)PDF資料
PDF描述
IXFR26N60Q N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓600V,導(dǎo)通電阻250mΩ的N溝道增強型HiPerFET功率MOSFET)
IXFR30N50 HiPerFET Power MOSFETs ISOPLUS247
IXFR30N50Q HiPerFET Power MOSFETs ISOPLUS247
IXFR32N50Q HiPerFET Power MOSFETs ISOPLUS247
IXFR38N80Q2 Electrically Isolated Back Surface
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFR26N60Q 功能描述:MOSFET 23 Amps 600V 0.25 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR27N80Q 功能描述:MOSFET 27 Amps 800V 0.35W Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR30N110P 功能描述:MOSFET 30 Amps 1100V 0.4000 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR30N50 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs ISOPLUS247
IXFR30N50Q 功能描述:MOSFET 30 Amps 500V 0.16 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*