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參數(shù)資料
| 型號： | IXBH40N140 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Voltage BIMOSFET Monolithic Bipolar MOS Transistor - N-Channel, Enhancement Mode |
| 中文描述： | 33 A, 1400 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 61K |
| 代理商： | IXBH40N140 |
2000 IXYS All rights reserved
1 - 4
Features
International standard package
JEDEC TO-247 AD
High Voltage BIMOSFET
TM
- replaces high voltage Darlingtons
and series connected MOSFETs
- lower effective R
Monolithic construction
- high blocking voltage capability
- very fast turn-off characteristics
MOS Gate turn-on
- drive simplicity
Intrinsic diode
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
CRT deflection
Lamp ballasts
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
0
IXYS reserves the right to change limits, test conditions and dimensions.
TO-247 AD
G
C
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
C (TAB)
C
E
G
Symbol
Conditions
Maximum Ratings
40N140
40N160
V
CES
V
CGR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
1400
1400
1600
1600
V
V
V
GES
V
GEM
Continuous
Transient
20
30
V
V
I
C25
I
C90
I
CM
T
C
= 25 C,
T
C
= 90 C
T
C
= 25 C, 1 ms
33
20
40
A
A
A
SSOA
(RBSOA)
V
= 15 V, T
= 125 C, R
= 22 V
CE
= 0.8V
CES
Clamped inductive load, L = 100 H
I
CM
= 40
A
P
C
T
J
T
JM
T
stg
T
L
T
C
= 25 C
350
W
-55 ... +150
C
C
C
C
150
-55 ... +150
1.6 mm (0.063 in) from case for 10 s
300
M
d
Mounting torque
1.15/10 Nm/lb.in.
Weight
6
g
Symbol
Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 1 mA, V
GE
= 0 V
40N140
40N160
1400
1600
V
V
V
GE(th)
I
C
= 2 mA, V
CE
= V
GE
4
8
V
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
400
A
3
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
500
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
6.2
7.1
7.8
V
V
T
J
= 125 C
High Voltage BIMOSFET
TM
Monolithic Bipolar
MOS Transistor
N-Channel, Enhancement Mode
IXBH 40N140
IXBH 40N160
V
CES
I
C25
V
CE(sat)
= 6.2 V
typ.
t
fi
= 40 ns
= 1400/1600
V
= 33 A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXBH40N160 | High Voltage BIMOSFET Monolithic Bipolar MOS Transistor - N-Channel, Enhancement Mode |
| IXBH42N170 | High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor |
| IXBH9N140G | High Voltage BIMOSFET Monolithic Bipolar MOS Transistor |
| IXBH9N160G | High Voltage BIMOSFET Monolithic Bipolar MOS Transistor |
| IXBJ40N140 | N-Channel, Enhancement Mode High Voltage BIMOSFET(VCES為1400V，VCE(sat)為7.1V的N溝道增強型高電壓BIMOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| IXBH40N160 | 功能描述:IGBT 晶體管 1600V 33A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXBH42N170 | 功能描述:IGBT 晶體管 1700V 75A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXBH42N170A | 功能描述:IGBT 晶體管 BIMOSET 42A 1700V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXBH5N160G | 功能描述:IGBT 晶體管 5 Amps 1600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXBH6N170 | 功能描述:IGBT 晶體管 12 Amps 1700V 3.6 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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