參數(shù)資料
型號(hào): IXBJ40N140
廠商: IXYS CORP
元件分類: IGBT 晶體管
英文描述: N-Channel, Enhancement Mode High Voltage BIMOSFET(VCES為1400V,VCE(sat)為7.1V的N溝道增強(qiáng)型高電壓BIMOSFET)
中文描述: 33 A, 1400 V, N-CHANNEL IGBT
封裝: LEADED TO-268, 3 PIN
文件頁數(shù): 1/4頁
文件大小: 62K
代理商: IXBJ40N140
2000 IXYS All rights reserved
1 - 4
TO-268
G
C
E
G = Gate
E = Emitter TAB = Collector
C = Collector
C (TAB)
C
E
G
Symbol
Test Conditions
Maximum Ratings
40N140
40N160
V
CES
V
CGR
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MW
1400
1400
1600
1600
V
V
V
GES
V
GEM
Continuous
Transient
±20
±30
V
V
I
C25
I
C90
I
CM
T
C
= 25°C,
T
C
= 90°C
T
C
= 25°C, 1 ms
33
20
40
A
A
A
SSOA
(RBSOA)
V
= 15 V, T
= 125°C, R
= 22 ; V
CE
= 0.8 V
CES
Clamped inductive load, L = 100 mH
I
CM
= 40
A
P
C
T
J
T
JM
T
stg
T
C
= 25°C
350
W
-55 ... +150
°C
°C
°C
150
-55 ... +150
T
L
1.6 mm (0.063 in) from case for 10 s
300
°C
M
d
Mounting torque
1.15/10 Nm/lb.in.
Weight
6
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 1 mA, V
GE
= 0 V
40N140
40N160
1400
1600
V
V
V
GE(th)
I
C
= 2 mA, V
CE
= V
GE
4
8
V
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25°C
T
J
= 125°C
400
A
3
mA
I
GES
V
CE
= 0 V, V
GE
= ±20 V
± 500
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
6.2
7.1
7.8
V
V
T
J
= 125°C
High Voltage BIMOSFET
TM
Monolithic Bipolar
MOS Transistor
IXBJ 40N140
IXBJ 40N160
V
CES
I
C25
V
CE(sat)
= 7.1 V
t
fi
= 40 ns
= 1400/1600
V
= 33 A
N-Channel, Enhancement Mode
98662 (10/99)
Features
Leaded TO-268 package
High Voltage BIMOSFET
TM
- replaces high voltage Darlingtons
and series connected MOSFETs
- lower effective R
Monolithic construction
- high blocking voltage capability
- very fast turn-off characteristics
MOS Gate turn-on
- drive simplicity
Intrinsic diode
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
CRT deflection
Lamp ballasts
Advantages
Space savings
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
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