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參數資料
| 型號： | IXBH9N140G |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | High Voltage BIMOSFET Monolithic Bipolar MOS Transistor |
| 中文描述： | 9 A, 1400 V, N-CHANNEL IGBT, TO-247AD |
| 文件頁數： | 1/4頁 |
| 文件大小： | 63K |
| 代理商： | IXBH9N140G |
2000 IXYS All rights reserved
1 - 4
C4
High Voltage BIMOSFET
TM
Monolithic Bipolar
MOS Transistor
IXBH 9N140G
IXBH 9N160G
V
CES
I
C25
V
CE(sat)
= 4.9 V
typ.
t
fi
= 70 ns
= 1400/1600
V
= 9 A
N-Channel, Enhancement Mode
MOSFET compatible
TO-247 AD
G
C
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
C (TAB)
C
E
G
Symbol
Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 0.25 mA, V
GE
= 0 V
9N140G
9N160G
1400
1600
3.5
V
V
V
V
GE(th)
I
C
= 0.5 mA, V
CE
= V
GE
5.5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
=125
°
C
100
μ
A
mA
0.1
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
500
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
4.9
5.6
7
V
V
T
J
=125
°
C
Symbol
Conditions
Maximum Ratings
9N140G
9N160G
V
CES
V
CGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
1400
1400
1600
1600
V
V
V
GES
V
GEM
Continuous
Transient
±
20
±
30
V
V
I
C25
I
C90
I
CM
T
C
= 25
°
C,
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 10 V, T
= 125
°
C, R
= 27
V
CE
= 0.8V
CES
Clamped inductive load, L = 100
μ
H
9
5
A
A
A
10
SSOA
(RBSOA)
I
CM
= 12
A
P
C
T
C
= 25
°
C
100
W
T
J
T
JM
T
stg
T
L
-55 ... +150
°
C
°
C
°
C
°
C
150
-55 ... +150
1.6 mm (0.063 in) from case for 10 s
300
M
d
Mounting torque
1.15/10 Nm/lb.in.
Weight
6
g
IXYS Semiconductor GmbH
Edisonstr. 15,
Phone: +49-6206-503-0, Fax: +49-6206-503627
D-68623 Lampertheim
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
Preliminary Data
Features
High Voltage BIMOSFET
TM
- replaces high voltage Darlingtons
and series connected MOSFETs
- lower effective R
DS(on)
MOS Gate turn-on
- drive simplicity
- MOSFET compatible for 10V
turn on gate voltage
Monolithic construction
- high blocking voltage capability
- very fast turn-off characteristics
International standard package
JEDEC TO-247 AD
Reverse conducting capability
Applications
Flyback converters
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
CRT deflection
Lamp ballasts
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IXBH9N160 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.6KV V(BR)CES | 9A I(C) | TO-247AD |
| IXBH9N160G | 功能描述:IGBT 晶體管 9 Amps 1600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXBK55N300 | 功能描述:IGBT 3000V 130A 625W TO264 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:BIMOSFET™ 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| IXBK64N250 | 功能描述:功率驅動器IC BIMOSFET 2500V 75A RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IXBK75N170 | 功能描述:MOSFET BIMOSFETS 1700V 200A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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