參數(shù)資料
型號(hào)： IXBH42N170
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
中文描述： 80 A, 1700 V, N-CHANNEL IGBT, TO-247
封裝： PLASTIC PACKAGE-3
文件頁數(shù)： 1/5頁
文件大?。?/td> 581K
代理商： IXBH42N170
2004 IXYS All rights reserve
V
CES
I
C25
V
CE(sat)
=
= 1700 V
=
75 A
3.6
V
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
GCE
TO-247 AD
(IXBH)
Features
z
High Blocking Voltage
z
JEDEC TO-268 surface and
JEDEC TO-247 AD
z
Low conduction losses
z
High current handling capability
z
MOS Gate turn-on
- drive simplicity
z
Molding epoxies meet UL
94
V-0
flammability classification
Applications
z
AC motor speed control
z
Uninterruptible power supplies (UPS)
z
Switched-mode and resonant-mode
power supplies
z
Capacitor discharge circuits
Advantages
z
Lower conduction losses than MOSFETs
z
High power density
z
Suitable for surface mounting
z
Easy to mount with 1 screw,
(isolated mounting screw hole)
DS98710B(12/04)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 250
μ
A, V
GE
= 0 V
= 750
μ
A, V
CE
= V
GE
1700
2.5
V
V
5.5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
50
1.5
μ
A
mA
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
3.6
V
V
T
J
= 125
°
C
3.7
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
1700
V
1700
V
V
GES
V
GEM
Continuous
±
20
V
Transient
±
30
V
I
C25
I
C90
I
CM
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
G
= 10
Clamped inductive load
75
A
42
A
180
A
SSOA
(RBSOA)
I
CM
=
V
CES
=
90
A
V
1350
T
(SCSOA)
V
GE
= 15 V, V
=
1200V, T
J
= 125
°
C
R
G
= 10
non repetitive
T
C
= 25
°
C
10
μ
s
P
C
360
W
T
J
T
JM
T
stg
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
350
°
C
260
°
C
M
d
Weight
Mounting torque (M3)
1.13/10Nm/lb.in.
TO-247 AD
TO-268
6
4
g
g
TO-268 (IXBT)
(TAB)
G
E
High Voltage, High Gain
BIMOSFET
TM
Monolithic
Bipolar MOS Transistor
IXBH 42N170
IXBT 42N170
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