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參數(shù)資料
| 型號(hào)： | IXBH42N170 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor |
| 中文描述： | 80 A, 1700 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 581K |
| 代理商： | IXBH42N170 |
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
4,835,592
one or moreof the following U.S. patents:
4,850,072
4,881,106
Dim.
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205 0.225
.780
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
P
Q
R
S
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
.800
.177
.144
3.55
5.89
4.32
6.15 BSC
.140
0.232 0.252
.170
242 BSC
.216
e
P
TO-247 AD Outline
Remarks: Switching times may
increase for V
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Remarks: Switching times may
increase for V
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
Pulse test, t
≤
300
μ
s, duty cycle
≤
2 %
= I
; V
CE
= 10 V,
20
30
S
C
ies
C
oes
C
res
3500
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
195
pF
45
pF
Q
g
Q
ge
Q
gc
147
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
40
nC
70
nC
t
d(on)
t
ri
t
d(off)
t
fi
E
off
45
ns
35
ns
365
ns
465
ns
9
mJ
t
d(on)
t
ri
E
on
t
d(off)
t
fi
45
ns
38
ns
50
mJ
390
ns
730
ns
E
off
12.8
mJ
R
thJC
0.35 K/W
R
thCK
(TO-247)
0.25
K/W
Reverse Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
V
F
I
F
t
= I
, V
= 0 V, Pulse test,
< 300 us, duty cycle d < 2%
3.0
V
I
RM
t
rr
I
F
v
R
=
25A,
V
GE
= 0 V, -di
F
/dt = 50 A/us
= 100V
24
A
360
ns
Inductive load, T
J
= 125
°
C
I
C
= I
C90
, V
GE
= 15 V
V
CE
= 0.5 V
CES
, R
G
= R
off
= 10
Inductive load, T
J
= 25
°
C
I
C
= I
, V
GE
= 15 V
V
CE
= 0.5 V
CES
, R
G
= R
off
= 10
Min Recommended Footprint
TO-268 Outline
IXBH 42N170
IXBT 42N170
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
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| IXBH42N170A | 功能描述:IGBT 晶體管 BIMOSET 42A 1700V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXBH5N160G | 功能描述:IGBT 晶體管 5 Amps 1600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXBH6N170 | 功能描述:IGBT 晶體管 12 Amps 1700V 3.6 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXBH9N140 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.4KV V(BR)CES | 9A I(C) | TO-247AD |
| IXBH9N140G | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:High Voltage BIMOSFET Monolithic Bipolar MOS Transistor |
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