參數(shù)資料
型號： ITF86182SK8T
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET
中文描述： 30 V, 0.0175 ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝： PLASTIC, SO-8
文件頁數(shù)： 8/12頁
文件大?。?/td> 174K
代理商： ITF86182SK8T
8
PSPICE Electrical Model
.SUBCKT ITF86182SK8 2 1 3 ;
REV Nov 1999
CA 12 8 2.2e-9
CB 15 14 2.6e-9
CIN 6 8 2.9e-9
DBODY 5 7 DBODYMOD
DBREAK 7 11 DBREAKMOD
DESD1 91 9 DESD1MOD
DESD2 91 7 DESD2MOD
DPLCAP 10 6 DPLCAPMOD
EBREAK 5 11 17 18 -36.2
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 5 10 8 6 1
EVTHRES 6 21 19 8 1
EVTEMP 6 20 18 22 1
IT 8 17 1
LDRAIN 2 5 1.0e-9
LGATE 1 9 1.04e-9
LSOURCE 3 7 1.29e-10
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 2.3e-3
RGATE 9 20 4.3
RLDRAIN 2 5 10
RLGATE 1 9 10.4
RLSOURCE 3 7 1.29
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 4e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*220),2.1))}
.MODEL DBODYMOD D (IS = 1.1e-11 N = 1.03 RS = 5e-3 TRS1 = 1.75e-3 TRS2 = 5.08e-6 CJO = 2.17e-9 TT = 1e-10 M = 0.5)
.MODEL DBREAKMOD D (RS = 1.9e-1 TRS1 = 1e-4 TRS2 = -1e-6)
.MODEL DESD1MOD D (BV = 17.2 TBV1 = -2.5E-3 N = 21 RS = 500)
.MODEL DESD2MOD D (BV = 17 TBV1 = -2.5E-3 N = 21 RS = 0)
.MODEL DPLCAPMOD D (CJO = 1.6e-9 IS = 1e-30 N = 10 M = 0.37 VJ = 0.44)
.MODEL MMEDMOD PMOS (VTO = -1.47 KP = 4 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 4.3)
.MODEL MSTROMOD PMOS (VTO = -1.82 KP = 87 LAMBDA = 0.01 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD PMOS (VTO = -1.19 KP = 0.06 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 43 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 7.3e-4 TC2 = -8e-7)
.MODEL RDRAINMOD RES (TC1 = 1e-2 TC2 = 1e-6)
.MODEL RSLCMOD RES (TC1 = 2e-4 TC2 = -2e-5)
.MODEL RSOURCEMOD RES (TC1 = 8e-4 TC2 = 1e-5)
.MODEL RVTHRESMOD RES (TC1 = 1.5e-3 TC2 = 4.1e-6)
.MODEL RVTEMPMOD RES (TC1 = -1.2e-3 TC2 = -1e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.5 VOFF= 1.5)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 1.5 VOFF= 2.5)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.75 VOFF= -0.5)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.5 VOFF= 0.75)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
18
22
-
+
+
-
5
51
+
-
19
8
+
-
17
18
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
8
6
LGATE
RLGATE
20
+
-
+
-
EBREAK
DESD1
91
DESD2
6
ITF86182SK8T
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